AS6C1008-55PIN Alliance Memory, AS6C1008-55PIN Datasheet - Page 7

• Manufacturer Part Number: AS6C1008-55PIN
• Description: SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
• Manufacturer: Alliance Memory

Specifications of AS6C1008-55PIN

• Rohs: yes
• Memory Size: 128 KB
• Organization: 128 K x 8
• Access Time: 55 ns
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 60 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Package / Case: PDIP-32
• Memory Type: CMOS
• Factory Pack Quantity: 13

DATA RETENTION CHARACTERISTICS
V
Data Retention Current
Chip Disable to Data
Retention Time
Recovery Time
t
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1)
Low Vcc Data Retention Waveform (2)
RC
CC
CE#
CE2
*
Vcc
Vcc
February 2007
02/February/07, v 1.0
= Read Cycle Time C=Commercial temp/I = Industrial temp**
for Data Retention
PARAMETER
Vcc(min.)
Vcc(min.)
V
V
SYMBOL
t
IH
t
IL
CDR
CDR
t
V
I
CDR
DR
t
128K X 8 BIT LOW POWER CMOS SRAM
DR
R
V
CE#
or CE2 ≦ 0.2V
CE#
or CE2 ≦ 0.2V
See Data Retention
Waveforms (below)
CC
= 1.5V
(
(CE2 controlled)
≧
CE#
≧
TEST CONDITION
Alliance Memory Inc.
CE#
V
V
CE2 ≦ 0.2V
CC
V
V
CC
controlled)
DR
DR
≧ cc-0.2V
- 0.2V
- 0.2V
≧ 1.5V
≧ 1.5V
V
C**
I**
® ®
MIN.
t
1.5
Vcc(min.)
Vcc(min.)
RC
0
-
*
t
t
R
R
V
V
IH
IL
TYP.
0.5
0
-
-
-
MAX.
12
30
5.5
-
-
Page 7 of 14
AS6C1008
UNIT
ns
ns
V
µA
µ A