AS6C1008-55PIN Alliance Memory, AS6C1008-55PIN Datasheet - Page 4

• Manufacturer Part Number: AS6C1008-55PIN
• Description: SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
• Manufacturer: Alliance Memory

Specifications of AS6C1008-55PIN

• Rohs: yes
• Memory Size: 128 KB
• Organization: 128 K x 8
• Access Time: 55 ns
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 60 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Package / Case: PDIP-32
• Memory Type: CMOS
• Factory Pack Quantity: 13

Notes:
1. V
2. V
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
CAPACITANCE
n I
Input/Output Capacitance
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
n I
n I
Input and Output Timing Reference Levels
O
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
*These parameters are guaranteed by device characterization, but not production tested.
Typical valued are measured at V
u
p
p
p
p t
IH
IL
t u
t u
t u
February 2007
02/February/07, v 1.0
(min) = V
(max) = V
t u
C
P
R
u
a
s i
L
s l
p
o
e
a
a
e
a
c
PARAMETER
d
SS
PARAMETER
PARAMETER
L
a t i
n
CC
e
d
- 3.0V for pulse width less than 10ns.
v
n
+ 3.0V for pulse width less than 10ns.
F
e
c
l l a
s l
e
i T
(T
m
A
e
= 25 , f
s
℃
CC
128K X 8 BIT LOW POWER CMOS SRAM
= V
= 1.0MHz)
CC
(TYP.) and T
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
AA
ACE
OE
CLZ
OLZ
CHZ
OHZ
OH
WC
AW
CW
AS
WP
WR
DW
DH
OW
WHZ
SYM.
SYM.
SYMBOL
*
*
*
*
*
*
Alliance Memory Inc.
C
C
A
I/O
IN
= 25 ºC
0
3
1.5V
C
2 .
n
L
s
V
=30pF + 1TTL, I
®
o t
MIN.
V
CC
-
-
AS6C1008-55
- 0.2V
AS6C1008-55
MIN.
MIN.
55
10
10
55
50
50
45
25
0
0
0
5
5
-
-
-
-
-
-
OH
MAX.
MAX.
/I
55
55
30
20
20
20
OL
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
= -1mA/2mA
6
8
Page 4 of 14
AS6C1008
UNIT
pF
pF
UNIT
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns