SI3863BDV-T1-E3 Vishay/Siliconix, SI3863BDV-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI3863BDV-T1-E3
• Description: Power Switch ICs - Power Distribution 12V 2.5A 0.83W
• Manufacturer: Vishay/Siliconix

Specifications of SI3863BDV-T1-E3

• Product Category: Power Switch ICs - Power Distribution
• Rohs: yes
• Number Of Outputs: 1
• On Resistance (max): 0.11 Ohms
• Operating Supply Voltage: 2.5 V to 12 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Maximum Power Dissipation: 830 mW
• Minimum Operating Temperature: - 55 C
• Output Current: 2.5 A
• Factory Pack Quantity: 3000
• Part # Aliases: SI3863BDV-E3

Si3861BDV
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
Notes:
a. Surface Mounted on FR4 board.
b. V
c. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS T
Parameter
Input Voltage
ON/OFF Voltage
Load Current
Continuous Intrinsic Diode Conduction
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Continuous Current)
Maximum Junction-to-Foot (Q2)
SPECIFICATIONS T
Parameter
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
ON Characteristics
Input Voltage Range
On-Resistance (P-Channel) at 1 A
On-State (P-Channel) Drain-Current
IN
= 12 V, V
Ordering Information: Si3861BDV-T1-E3 (Lead (Pb)-free)
ON/OFF
= 8 V, T
R2
D2
D2
a
J
A
= 25 °C, unless otherwise noted
= 25 °C.
Si3861BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
TSOP-6
Top View
a
Symbol
R
I
V
DS(on)
D(on)
6
5
4
V
I
FL
SD
IN
A
R1, C1
ON/OFF
S2
a
V
= 25 °C, unless otherwise noted
V
Continuous
V
IN-OUT
IN-OUT
ON/OFF
Pulsed
≤ 0.2 V, V
≤ 0.3 V, V
V
b, c
= 1.5 V, I
IN
a, b
= 30 V, V
Test Conditions
I
IN
S
IN
D
= - 1 A
= 10 V, V
= 5 V, V
= 1 A
Symbol
V
Symbol
ON/OFF
T
ON/OFF
R
R
ESD
ON/OFF
J
V
, T
P
I
thJA
thJF
I
L
S
IN
D
stg
S2
ON/OFF
ON/OFF
= 0 V
V
V
V
IN
IN
IN
4
5
= 1.5 V
= 1.5 V
= 5.0 V
= 4.5 V
= 10 V
Typical
120
60
Si3861BDV
- 55 to 150
R2
Limit
± 2.3
0.83
Min.
1
± 4
4.5
- 1
20
8
3
1
1
Q2
Q1
Maximum
S09-2110-Rev. B, 12-Oct-09
150
2, 3
0.060
0.096
0.115
80
Typ.
- 0.8
Document Number: 73343
6
D2
R1, C1
0.075
0.120
0.145
Max.
- 1
20
1
°C/W
Unit
Unit
kV
°C
W
V
A
Unit
µA
Ω
V
V
A