VND5E008MYTR-E STMicroelectronics, VND5E008MYTR-E Datasheet - Page 16

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VND5E008MYTR-E

Manufacturer Part Number
VND5E008MYTR-E
Description
Power Switch ICs - Power Distribution Double Ch High Side 41V 8mOhm 76A 2uA
Manufacturer
STMicroelectronics
Datasheet

Specifications of VND5E008MYTR-E

Product Category
Power Switch ICs - Power Distribution
Rohs
yes

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Electrical specifications
16/35
Table 11.
1. The above test levels must be considered referred to V
2. Valid in case of external load dump clamp: 40 V maximum referred to ground.
Table 12.
1. The above test levels must be considered referred to V
2. Valid in case of external load dump clamp: 40 V maximum referred to ground.
3. Suppressed load dump (pulse 5b) is withstood with a minimum load connected as specified in
Table 13.
ISO 7637-2:
ISO 7637-2:
Test pulse
Test pulse
Table 3: Absolute maximum
2004(E)
2004(E)
5b
Class
5b
2a
3a
3b
2a
3a
3b
(2)(3)
C
E
1
4
1
4
(2)
Electrical transient requirements (part 1)
Electrical transient requirements (part 2)
Electrical transient requirements (part 3)
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
-100 V
+37 V
+75 V
+65 V
-75 V
-6 V
III
Test levels
rating.
Doc ID 018699 Rev 3
+100 V
-100 V
-150 V
+50 V
+87 V
(1)
-7 V
IV
III
C
C
C
C
C
C
Number of
test times
pulses or
1 pulse
1 pulse
pulses
pulses
Test level results
5000
5000
1h
1h
CC
CC
Contents
= 13.5 V except for pulse 5b.
= 13.5 V except for pulse 5b
90 ms
90 ms
Burst cycle/pulse
0.5 s
0.2 s
repetition time
(1)
100 ms
100 ms
5 s
5 s
IV
C
C
C
C
C
C
VND5E008MY-E
100 ms, 0.01 Ω
0.1 µs, 50 Ω
0.1 µs, 50 Ω
Delays and
400 ms, 2 Ω
impedance
2 ms, 10 Ω
50 µs, 2 Ω

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