VND5E025AYTR-E STMicroelectronics, VND5E025AYTR-E Datasheet - Page 25

• Manufacturer Part Number: VND5E025AYTR-E
• Description: Power Switch ICs - Power Distribution Double Ch High Side 41V 25mOhm 60A
• Manufacturer: STMicroelectronics

Specifications of VND5E025AYTR-E

• Product Category: Power Switch ICs - Power Distribution
• Rohs: yes
• Operating Supply Voltage: 4.5 V to 28 V

VND5E025AK-E
3
3.1
3.1.1
Application information
Figure 32. Application schematic
1. Channel 2 has the same internal circuit as channel 1.
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.
2.
where -I
maximum rating section of the device datasheet.
Power dissipation in R
P
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
values. This shift varies depending on how many devices are On in the case of several high
side drivers sharing the same R
D
GND
= (-V
R
R
+5V
ΜCU
produces a shift (I
GND
GND
CC
GND
)
≤ 600mV / (I
≥ (−V
2
/R
is the DC reverse ground pin current and can be found in the absolute
GND
CC
C
) / (-I
EXT
R
R
R
prot
prot
prot
R
GND
SENSE
S(on)max
GND
S(on)max
(when V
)
Doc ID 14618 Rev 4
)
CURRENT SENSE
GND
CS_DIS
INPUT
* R
CC
GND
.
(1)
<0: during reverse battery situations) is:
) in the input thresholds and the status output
V
GND
GND
GND
R
GND
GND
S(on)max
only)
V
CC
resistor.
D
GND
becomes the sum of the
Application information
OUTPUT
D
ld
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