SIP32408DNP-T1-GE4 Vishay/Siliconix, SIP32408DNP-T1-GE4 Datasheet - Page 10

• Manufacturer Part Number: SIP32408DNP-T1-GE4
• Description: Power Switch ICs - Power Distribution 3A Slew Rate
• Manufacturer: Vishay/Siliconix

Specifications of SIP32408DNP-T1-GE4

• Rohs: yes
• On Resistance (max): 52 mOhms
• Operating Supply Voltage: 1.1 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Package / Case: TDFN-4
• Current Limit: 2.3 A
• Maximum Power Dissipation: 735 mW
• Minimum Operating Temperature: - 40 C
• Switch Current (max): 3.5 A
• Part # Aliases: SIP32408DNP-GE4

SiP32408, SiP32409
Vishay Siliconix
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to about
324 mW.
So long as the load current is below the 3.5 A limit, the
maximum continuous switch current becomes a function of
two things: the package power dissipation and the R
the ambient temperature.
As an example let us calculate the worst case maximum load
current at T
at an input voltage of 1.2 V and is equal to 52 m. The
R
following formula:
R
Where T
we have
R
= 60 m
The maximum current limit is then determined by
I
which in this case is 2.3 A. Under the stated input voltage
condition, if the 2.3 A current limit is exceeded the internal die
temperature will rise and eventually, possibly damage the
device.
Active EN Pull Down for Reverse Blocking
When an internal circuit detects the condition of V
higher than V
to EN, forcing the switching OFF. The pull down value is
about 1 k.
Pulse Current Capability
The device is mounted on the evaluation board shown in the
PCB layout section. It is loaded with pulses of 5 A and 1 ms
for periods of 4.6 ms.
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10
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
LOAD
EN
DS(on)
DS(on)
DS(on)
IN
(max.)
at 70 °C can be extrapolated from this data using the
(at 70 °C) = R
(at 70 °C) = 52 m x (1 + 0.0033 x (70 °C - 25 °C))
C
is 3300 ppm/°C. Continuing with the calculation
A
<
= 70 °C. The worst case R
IN
Control Logic
Input Buffer
, it will turn on the pull down circuit connected
Pull Down
Circuit
R
P
DS
(max.)
(
ON
DS(on)
)
(at 25 °C) x (1 + T
Charge
Pump
will be activated. It connects the EN to GND with a
When V
For technical questions, contact:
OUT
Control and Drive
is 0.8 V above the V
V
resistance of around 1 kΩ.
DS(on)
OUT
Detect
> V
IN
This document is subject to change without notice.
at 25 °C occurs
Blocking
Reverse
C
IN
, pull down circuit
x DT)
OUT
DS(on)
0.8 V
OUT
at
[e-mail]
SiP32408 and SiP32409 can safely support 5 A pulse
current repetitively at 25 °C.
Switch Non-Repetitive Pulsed Current
SiP32408 and SiP32409 can withstand inrush current of up
to 12 A for 100 µs at 25 °C when heavy capacitive loads are
connected and the part is already enabled.
Recommended Board Layout
For the best performance, all traces should be as short as
possible to minimize the inductance and parasitic effects.
The input and output capacitors should be kept as close
as possible to the input and output pins respectively.
Connecting the central exposed pad to GND, using wide
traces for input, output, and GND help reducing the case to
ambient thermal impedance.
1 ms
5 A
4.6 ms
180 mA
S12-2893-Rev. E, 03-Dec-12
Document Number: 63717
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