MR4A08BYS35 Everspin Technologies, MR4A08BYS35 Datasheet - Page 8

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MR4A08BYS35

Manufacturer Part Number
MR4A08BYS35
Description
NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM
Manufacturer
Everspin Technologies
Datasheet

Specifications of MR4A08BYS35

Rohs
yes
Data Bus Width
8 bit
Memory Size
16 Mbit
Organization
2 M x 8
Interface Type
Parallel
Access Time
35 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
3 V
Operating Current
100 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Package / Case
TSOP-44
Mounting Style
SMD/SMT
Everspin Technologies
Timing Specifications
Read Mode
1
2
3
Parameter
Read cycle time
Address access time
Enable access time
Output enable access time
Output hold from address change
Enable low to output active
Output enable low to output active
Enable high to output Hi-Z
Output enable high to output Hi-Z
W is high for read cycle. Power supplies must be properly grounded and decoupled, and bus contention conditions must be
minimized or eliminated during read or write cycles.
Addresses valid before or at the same time E goes low.
This parameter is sampled and not 100% tested. Transition is measured ±200 mV from the steady-state voltage.
G (OUTPUT ENABLE)
A (ADDRESS)
Q (DATA OUT)
Note: Device is continuously selected (E≤V
E (CHIP ENABLE)
Q (DATA OUT)
A (ADDRESS)
2
© 2011
3
3
Previous Data Valid
3
3
IL
, G≤V
t
AXQX
Table 3.3 Read Cycle Timing
IL
).
Figure 3.3A Read Cycle 1
Figure 3.3B Read Cycle 2
t
t
AVQV
ELQX
t
GLQX
t
AVQV
t
ELQV
8
Symbol
t
t
t
t
t
t
t
t
t
AVAV
AVQV
ELQV
GLQV
AXQX
ELQX
GLQX
EHQZ
GHQZ
t
GLQV
t
AVAV
t
AVAV
Document Number: MR4A08B Rev. 5, 9/2011
Min
35
-
-
-
3
3
0
0
0
1
Data Valid
Data Valid
Max
-
35
35
15
-
-
-
15
10
t
GHQZ
t
EHQZ
MR4A08B
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns

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