74AHC1G126GW-G NXP Semiconductors, 74AHC1G126GW-G Datasheet
74AHC1G126GW-G
Specifications of 74AHC1G126GW-G
Related parts for 74AHC1G126GW-G
74AHC1G126GW-G Summary of contents
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... CDM JESD22-C101E: exceeds 1000 V Specified from 40 C to +125 C 3. Ordering information Table 1. Ordering information Type number Package Temperature range 40 C to +125 C 74AHC1G126GW 74AHCT1G126GW 40 C to +125 C 74AHC1G126GV 74AHCT1G126GV 40 C to +125 C 74AHC1G126GM 74AHCT1G126GM 40 C to +125 C 74AHC1G126GF ...
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... NXP Semiconductors 4. Marking Table 2. Marking codes Type number 74AHC1G126GW 74AHCT1G126GW 74AHC1G126GV 74AHCT1G126GV 74AHC1G126GM 74AHCT1G126GM 74AHC1G126GF 74AHCT1G126GF [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram mna125 Fig 1. Logic symbol 6. Pinning information 6 ...
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... NXP Semiconductors 6.2 Pin description Table 3. Pin description Symbol Pin SOT353-1/SOT753 GND n. Functional description Table 4. Function table H = HIGH voltage level LOW voltage level don’t care high-impedance OFF-state Input Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134) ...
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... NXP Semiconductors 9. Recommended operating conditions Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC V input voltage I V output voltage O T ambient temperature amb t/V input transition rise and fall rate 10. Static characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V) ...
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... NXP Semiconductors Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions C input I capacitance 74AHCT1G126 V HIGH-level input voltage V LOW-level input voltage V HIGH-level output voltage = 50 8 LOW-level ...
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... NXP Semiconductors Table 8. Dynamic characteristics GND = 0 V; For test circuit see Figure Symbol Parameter Conditions t enable time see disable time see dis ...
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... NXP Semiconductors Table 8. Dynamic characteristics GND = 0 V; For test circuit see Figure Symbol Parameter Conditions C power per buffer; PD dissipation pF MHz; L capacitance V = GND [ the same as t and PLH PHL t is the same as t and PZL ...
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... NXP Semiconductors OE input output LOW-to-OFF OFF-to-LOW output HIGH-to-OFF OFF-to-HIGH Measurement points are given in Fig 8. enable and disable times Table 9. Measurement points Type Input V 0.5 V 74AHC1G126 74AHCT1G126 1.5 V 74AHC_AHCT1G126 Product data sheet 74AHC1G126; 74AHCT1G126 GND t PLZ ...
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... NXP Semiconductors negative Test data is given in Table Definitions test circuit Termination resistance should be equal to output impedance Load capacitance including jig and probe capacitance Load resistance Test selection switch. Fig 9. Test circuit for measuring switching times Table 10. Test data ...
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... NXP Semiconductors 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. 0.1 1.0 mm 1.1 0.15 0 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE ...
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... NXP Semiconductors Plastic surface-mounted package; 5 leads DIMENSIONS (mm are the original dimensions) UNIT 0.100 1.1 0.40 0.26 mm 0.013 0.9 0.25 0.10 OUTLINE VERSION IEC SOT753 Fig 11. Package outline SOT753 (SC-74A) 74AHC_AHCT1G126 Product data sheet 74AHC1G126; 74AHCT1G126 scale ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area Dimensions (mm are the original dimensions) (1) Unit max 0.5 0.04 0.25 1.50 mm nom 0.20 1.45 min 0.17 1.40 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. Outline version ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 6× (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 13. Package outline SOT891 (XSON6) ...
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... NXP Semiconductors 14. Abbreviations Table 11. Abbreviations Acronym Description CMOS Complementary Metal Oxide Semiconductor CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 15. Revision history Table 12. Revision history Document ID Release date 74AHC_AHCT1G126 v.8 ...
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... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 3 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 13 Package outline ...