NTB0102GD,125 NXP Semiconductors, NTB0102GD,125 Datasheet - Page 16

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NTB0102GD,125

Manufacturer Part Number
NTB0102GD,125
Description
Translation - Voltage Levels 5.9ns 6.5V 250mW
Manufacturer
NXP Semiconductors
Datasheet

Specifications of NTB0102GD,125

Rohs
yes
Propagation Delay Time
5.9 ns
Supply Voltage - Max
+ 6.5 V
Supply Voltage - Min
- 0.5 V
Maximum Operating Temperature
+ 125 C
Package / Case
XSON-8
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
3000
NXP Semiconductors
NTB0102
Product data sheet
Fig 10. Architecture of NTB0102 I/O cell (one channel)
13.2 Architecture
The architecture of the NTB0102 is shown in
extra input signal to control the direction of data flow from A to B or from B to A. In a static
state, the output drivers of the NTB0102 can maintain a defined output level, but the
output architecture is designed to be weak, so that they can be overdriven by an external
driver when data on the bus starts flowing in the opposite direction. The output of one-shot
circuits detect rising or falling edges on the A or B ports. During a rising edge, the
one-shot circuits turn on the PMOS transistors (T1, T3) for a short duration, accelerating
the LOW-to-HIGH transition. Similarly, during a falling edge, the one-shot circuits turn on
the NMOS transistors (T2, T4) for a short duration, accelerating the HIGH-to-LOW
transition. During output transitions the typical output impedance is 70  at V
to 1.8 V, 50  at V
A
V
CC(A)
All information provided in this document is subject to legal disclaimers.
Dual supply translating transceiver; auto direction sensing; 3-state
CCO
T3
T4
4 kΩ
Rev. 4 — 23 January 2013
= 1.8 V to 3.3 V and 40  at V
SHOT
SHOT
ONE
ONE
SHOT
SHOT
ONE
ONE
4 kΩ
T1
T2
Figure
V
CC(B)
001aal921
10. The device does not require an
CCO
B
= 3.3 V to 5.0 V.
NTB0102
© NXP B.V. 2013. All rights reserved.
CCO
= 1.2 V
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