NTB0101GW,125 NXP Semiconductors, NTB0101GW,125 Datasheet - Page 23
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
NTB0101GW,125
Manufacturer Part Number
NTB0101GW,125
Description
Translation - Voltage Levels 5.9ns 5.5V 250mW
Manufacturer
NXP Semiconductors
Datasheet
1.NTB0101GW125.pdf
(26 pages)
Specifications of NTB0101GW,125
Rohs
yes
Propagation Delay Time
5.9 ns
Supply Voltage - Max
5.5 V
Supply Voltage - Min
1.2 V
Maximum Operating Temperature
+ 125 C
Package / Case
SC-88
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
3000
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB0101GW,125
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
15. Abbreviations
Table 16.
16. Revision history
Table 17.
NTB0101
Product data sheet
Acronym
CDM
DUT
ESD
HBM
MM
NMOS
PMOS
PRR
Document ID
NTB0101 v.4
Modifications:
NTB0101 v.3
Modifications:
NTB0101 v.2
NTB0101 v.1
Abbreviations
Revision history
Description
Charged Device Model
Device Under Test
ElectroStatic Discharge
Human Body Model
Machine Model
N-type Metal Oxide Semiconductor
P-type Metal Oxide Semiconductor
Pulse Repetition Rate
Release date
20120806
20111110
20110505
20101230
•
•
Package outline drawing of SOT886
Legal pages updated.
All information provided in this document is subject to legal disclaimers.
Dual supply translating transceiver; auto direction sensing; 3-state
Product data sheet
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Rev. 4 — 6 August 2012
(Figure
Change notice
-
-
-
-
13) modified.
NTB0101 v.3
NTB0101 v.2
NTB0101 v.1
-
Supersedes
NTB0101
© NXP B.V. 2012. All rights reserved.
23 of 26