SST39VF160-70-4I-BK Microchip Technology, SST39VF160-70-4I-BK Datasheet

SST39VF160-70-4I-BK

Manufacturer Part Number

SST39VF160-70-4I-BK

Description

Flash 1M X 16 70ns

Manufacturer

Microchip Technology

Datasheet

1.SST39VF160-70-4I-BK.pdf (24 pages)

Specifications of SST39VF160-70-4I-BK

Product Category

Flash

Data Bus Width

16 bit

Memory Type

NOR Flash

Memory Size

16 Mbit

Architecture

Sectored

Interface Type

Parallel

Supply Voltage - Max

3.6 V

Supply Voltage - Min

2.7 V

Maximum Operating Current

20 mA

Operating Temperature

+ 85 C

Mounting Style

SMD/SMT

Package / Case

TFBGA

Organization

4 KB x 512

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FEATURES:

• Organized as 1M x16

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption

• Sector-Erase Capability

• Fast Read Access Time

• Latched Address and Data

PRODUCT DESCRIPTION

The SST39LF/VF160 devices are 1M x16 CMOS Multi-

Purpose Flash (MPF) manufactured with SST’s propri-

etary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick-oxide tunneling injec-

tor attain better reliability and manufacturability compared

with alternate approaches. The SST39LF160 write (Pro-

gram or Erase) with a 3.0-3.6V power supply. The

SST39VF160 write (Program or Erase) with a 2.7-3.6V

power supply. These devices conform to JEDEC standard

pinouts for x16 memories.

Featuring

SST39LF/VF160 devices provide a typical Word-Program

time of 14 µsec. These devices use Toggle Bit or Data#

Polling to indicate the completion of Program operation.

To protect against inadvertent write, they have on-chip

hardware and Software Data Protection schemes.

Designed, manufactured, and tested for a wide spectrum

of applications, these devices are offered with a guaran-

teed typical endurance of 10,000 cycles. Data retention is

rated at greater than 100 years.

The SST39LF/VF160 devices are suited for applications

that require convenient and economical updating of pro-

gram, configuration, or data memory. For all system appli-

cations, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during Erase and Program than

alternative flash technologies. The total energy consumed

is a function of the applied voltage, current, and time of

S71145-04-000 11/03

– 3.0-3.6V for SST39LF160

– 2.7-3.6V for SST39VF160

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

(typical values at 14 MHz)

– Active Current: 12 mA (typical)

– Standby Current: 4 µA (typical)

– Auto Low Power Mode: 4 µA (typical)

– Uniform 2 KWord sectors

– 55 ns for SST39LF160

– 70 and 90 ns for SST39VF160

high

performance

16 Mbit (x16) Multi-Purpose Flash

399

SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories

SST39LF160 / SST39VF160

Word-Program,

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Fast Erase and Word-Program

• Automatic Write Timing

• End-of-Write Detection

• CMOS I/O Compatibility

• JEDEC Standard

• Packages Available

application. Since for any given voltage range, the Super-

Flash technology uses less current to program and has a

shorter erase time, the total energy consumed during any

Erase or Program operation is less than alternative flash

technologies. These devices also improve flexibility while

lowering the cost for program, data, and configuration

storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as

is necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated

Erase/Program cycles.

To meet high density, surface mount requirements, the

SST39LF/VF160 are offered in a 48-lead TSOP and a

48-ball TFBGA package. See Figures 1 and 2 for pin

assignments.

Device Operation

Commands are used to initiate the memory operation func-

tions of the device. Commands are written to the device

using standard microprocessor write sequences. A com-

mand is written by asserting WE# low while keeping CE#

low. The address bus is latched on the falling edge of WE#

or CE#, whichever occurs last. The data bus is latched on

the rising edge of WE# or CE#, whichever occurs first.

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time: 15 seconds (typical) for

– Internal V

– Toggle Bit

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (8mm x 10mm)

SST39LF/VF160

Generation

These specifications are subject to change without notice.

MPF is a trademark of Silicon Storage Technology, Inc.

Data Sheet

Related parts for SST39VF160-70-4I-BK

SST39VF160-70-4I-BK Summary of contents

Page 1

... The split-gate cell design and thick-oxide tunneling injec- tor attain better reliability and manufacturability compared with alternate approaches. The SST39LF160 write (Pro- gram or Erase) with a 3.0-3.6V power supply. The SST39VF160 write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories. Featuring ...

Page 2

... Block-Erase modes. The sector architecture is based on uniform sector size of 2 KWord. The Block-Erase mode ©2003 Silicon Storage Technology, Inc. 16 Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 is based on uniform block size of 32 KWord. The Sector- Erase operation is initiated by executing a six-byte com- mand sequence with Sector-Erase command (30H) and sector address (SA) in the last bus cycle ...

Page 3

... Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 Data# Polling ( When the SST39LF/VF160 are in the internal Program operation, any attempt to read DQ will produce the com- 7 plement of the true data. Once the Program operation is completed, DQ will produce true data. Note that even 7 though DQ may have valid data immediately following the ...

Page 4

... Top View 11 12 Die SST39LF160/SST39VF160 48- TSOP LEAD 4 16 Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 SuperFlash Memory Y-Decoder I/O Buffers and Data Latches 399 ILL B1.1 48 A16 DQ15 44 DQ7 43 DQ14 42 DQ6 41 DQ13 DQ5 ...

Page 5

... A6 A5 DQ0 DQ8 DQ9 DQ1 CE# OE 399 ILL F02a.0 48- TFBGA BALL -A address line will select the block 3.0-3.6V for SST39LF160 2.7-3.6V for SST39VF160 5 Data Sheet -A address lines will select the 19 11 T2.3 399 S71145-04-000 11/03 399 ...

Page 6

... F0H -A can but no other value, for Command sequence for SST39LF/VF160 Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 Address Sector or Block address, XXH for Chip-Erase See Table 4 4th Bus 5th Bus 6th Bus Write Cycle ...

Page 7

... Maximum time out for buffer program 2 25H 0001H Maximum time out for individual Sector/Block-Erase 2 26H 0001H Maximum time out for Chip-Erase 2 1. 0030H for SST39LF160 and 0027H for SST39VF160 TABLE EVICE EOMETRY NFORMATION FOR Address Data Data ...

Page 8

... Ambient Temp Commercial 0°C to +70°C Industrial -40°C to +85° ONDITIONS OF EST Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns Output Load . . . . . . . . . . . . . . . . . . . . for SST39LF160 Output Load . . . . . . . . . . . . . . . . . . . . . CL = 100 pF for SST39VF160 See Figures 14 and 15 ©2003 Silicon Storage Technology, Inc. 16 Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 V DD 3.0-3. 2.7-3.6V 2 ...

Page 9

... Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 TABLE PERATING HARACTERISTICS V = 3.0-3.6V SST39LF160 FOR DD Symbol Parameter I Power Supply Current DD 2 Read Program and Erase I Standby V Current Auto Low Power Current ALP I Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage ...

Page 10

... This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2003 Silicon Storage Technology, Inc 3.0-3.6V SST39LF160 ARAMETERS FOR DD SST39LF160-55 Min Max IMING ARAMETERS 10 16 Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 2.7-3.6V SST39VF160 AND FOR SST39VF160-70 SST39VF160-90 Min Max Min Max ...

Page 11

... Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 ADDRESS A 19-0 CE# OE WE# HIGH-Z DQ 15-0 FIGURE EAD YCLE IMING 5555 ADDRESS OE# CE# DQ 15-0 XXAA SW0 Note: X can be V FIGURE 4: WE# C ONTROLLED ©2003 Silicon Storage Technology, Inc OLZ T CLZ ...

Page 12

... V , but no other value ROGRAM YCLE IMING IAGRAM OEH T OE DATA# D IAGRAM 12 16 Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 INTERNAL PROGRAM OPERATION STARTS 399 ILL F05.3 T OES DATA# DATA 399 ILL F06.2 S71145-04-000 11/03 399 ...

Page 13

... Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 ADDRESS A 19-0 CE# OE# WE FIGURE OGGLE IT IMING 5555 ADDRESS A 19-0 CE# OE WE# DQ 15-0 XXAA SW0 Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met. (See Table 13) ...

Page 14

... XX55 XX80 XXAA XX55 SW1 SW2 SW3 SW4 but no other value ECTOR RASE IMING IAGRAM 14 16 Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 XX50 SW5 399 ILL F17 XX30 SW5 399 ILL F18.3 S71145-04-000 11/03 399 ...

Page 15

... Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 THREE-BYTE SEQUENCE FOR SOFTWARE ID ENTRY ADDRESS A 14-0 5555 2AAA CE# OE WE# DQ 15-0 XXAA SW0 Device ID = 2782H for SST39LF/VF160 Note: X can be V FIGURE 11 OFTWARE NTRY AND THREE-BYTE SEQUENCE FOR CFI QUERY ENTRY ADDRESS A 14-0 5555 2AAA CE# ...

Page 16

... SW0 Note: X can be V FIGURE 13 OFTWARE XIT ©2003 Silicon Storage Technology, Inc. 2AAA 5555 XX55 XXF0 T IDA T WHP SW1 SW2 but no other value IL IH /CFI E XIT 16 16 Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 399 ILL F10.1 S71145-04-000 11/03 399 ...

Page 17

... Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 V IHT INPUT V ILT AC test inputs are driven at V (0.9 V IHT for inputs and outputs are V (0 FIGURE 14 NPUT UTPUT TO DUT FIGURE 15 EST OAD XAMPLE ©2003 Silicon Storage Technology, Inc REFERENCE POINTS ) for a logic “1” and V (0 ...

Page 18

... Load data: XXA0H Address: 5555H Load Word Address/Word Data Wait for end of Program ( Data# Polling bit, or Toggle bit operation) Program Completed 399 ILL F13.3 Note: X can but no other value IL IH LGORITHM 18 16 Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 S71145-04-000 11/03 399 ...

Page 19

... Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 Internal Timer Program/Erase Initiated Wait SCE Program/Erase Completed FIGURE 17 AIT PTIONS ©2003 Silicon Storage Technology, Inc. Toggle Bit Program/Erase Initiated Read word Read same No word No Does DQ 6 match? Yes Program/Erase Completed 19 Data Sheet ...

Page 20

... Read Software ID operation Note: X can but no other value IL IH ID/CFI C F OMMAND LOWCHARTS 20 16 Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 Software ID Exit/CFI Exit Command Sequence Load data: XXF0H Address: XXH Wait T IDA Return to normal operation 399 ILL F15.2 S71145-04-000 11/03 399 ...

Page 21

... Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 Chip-Erase Command Sequence Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX80H Address: 5555H Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX10H Address: 5555H Wait T SCE Chip erased ...

Page 22

... SST39VF160-70-4C-BK SST39VF160-70-4C-EKE SST39VF160-90-4C-EK SST39VF160-90-4C-BK SST39VF160-90-4C-EKE SST39VF160-70-4I-EK SST39VF160-70-4I-BK SST39VF160-70-4I-EKE SST39VF160-90-4I-EK SST39VF160-90-4I-BK SST39VF160-90-4I-EKE Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ...

Page 23

... Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 PACKAGING DIAGRAMS Pin # 1 Identifier 0.70 0.50 Note: 1. Complies with JEDEC publication 95 MO-142 DD dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0 Maximum allowable mold flash is 0. the package ends, and 0.25 mm between leads. ...

Page 24

... (TFBGA) 8 ALL RID RRAY MM X Description to V IHC ILC www.SuperFlash.com or www.sst.com 24 16 Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 BOTTOM VIEW 5.60 0. 0.30 ± 0.05 (48X CORNER 1mm 48-tfbga-BK-8x10-300mic- Date May 2002 Mar 2003 ...

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