LFX125EB-04FH516C Lattice, LFX125EB-04FH516C Datasheet - Page 20
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LFX125EB-04FH516C
Manufacturer Part Number
LFX125EB-04FH516C
Description
FPGA - Field Programmable Gate Array Use LFX125EB-04F516C
Manufacturer
Lattice
Datasheet
1.LFX125EB-04F256C.pdf
(115 pages)
Specifications of LFX125EB-04FH516C
Number Of Gates
139 K
Number Of Logic Blocks
1936
Number Of I/os
22
Operating Supply Voltage
2.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
FPBGA-516
Minimum Operating Temperature
0 C
Factory Pack Quantity
135
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Lattice Semiconductor
pattern by a device programmer, securing proprietary designs from competitors. The entire device must be erased
in order to erase the security scheme.
Density Shifting
The ispXPGA family has been designed to ensure that different density devices in the same package have the
same pin-out. Furthermore, the architecture ensures a high success rate when performing design migration from
lower density parts to higher density parts. In many cases, it is possible to shift a lower utilization design targeted
for a high-density device to a lower density device. However, the exact details of the final resource utilization will
impact the likely success in each case.
Temperature Sensing Diode
The built-in temperature-sensing diodes allow junction temperature to be measured during device operation. A pair
of pins (DXp and DXn) are dedicated for monitoring device junction temperature. The measurement is done by
forcing 10 µA and 100 µA current in the forward direction, and then measuring the resulting voltage. The voltage
decreases with increasing temperature at approximately 1.64 mV/°C. A typical device with a 85°C junction temper-
ature will measure approximately 593 mV.
The temperature-sensing diode works for the entire operating range as shown in Figure 22 - Sensing Diode Volt-
age-Temperature Relationship. Refer to Lattice’s Thermal Management document for thermal coefficients. Also
refer to Lattice technical note number TN1043, Power Estimation in ispXPGA Devices.
Figure 22. Sensing Diode Voltage-Temperature Relationship
0.85
0.75
0.65
0.55
0.80
0.70
0.60
0.50
-50
-25
0
Junction Temperature (°C)
25
20
50
75
100
100 uA
10 uA
ispXPGA Family Data Sheet
125
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