CAT24C256YIGT3JN ON Semiconductor, CAT24C256YIGT3JN Datasheet - Page 3
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CAT24C256YIGT3JN
Manufacturer Part Number
CAT24C256YIGT3JN
Description
EEPROM
Manufacturer
ON Semiconductor
Datasheet
1.CAT24C256HU4IGT3.pdf
(18 pages)
Specifications of CAT24C256YIGT3JN
Memory Size
256 kbit
Organization
32768 x 8
Data Retention
100 yr
Maximum Clock Frequency
400 kHz
Maximum Operating Current
1 mA
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Minimum Operating Temperature
- 40 C
Operating Current
1 mA
Supply Voltage - Max
5.5 V
Supply Voltage - Min
1.8 V
7. The new product Rev E is identified by letter “E” or a dedicated marking code on top of the package.
8. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
9. When not driven, the WP, A
Table 5. D.C. OPERATING CHARACTERISTICS − New Product (Rev E)
(V
Table 6. PIN IMPEDANCE CHARACTERISTICS − New Product (Rev E)
(V
Symbol
CC
CC
and JEDEC test methods.
strong; therefore the external driver must be able to supply the pull−down current when attempting to drive the input HIGH. To conserve power,
as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V
I
V
V
I
I
V
V
V
V
CCW
WP
CCR
I
OL1
OL2
C
C
SB
I
IH1
IH2
IL1
IL2
L
= 1.8 V to 5.5 V, T
= 1.8 V to 5.5 V, T
IN
IN
, I
Symbol
A
(Note 8)
(Note 8)
(Note 9)
Read Current
Write Current
Standby Current
I/O Pin Leakage
Input Low Voltage
Input Low Voltage
Input High Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Parameter
A
A
SDA I/O Pin Capacitance
Input Capacitance (other pins)
WP Input Current, Address Input
Current (A
= −40°C to +85°C and V
= −40°C to +85°C and V
0
, A
1
, A
0
, A
2
Parameter
pins are pulled down to GND internally. For improved noise immunity, the internal pull−down is relatively
1
, A
Read, f
All I/O Pins at GND or V
Pin at GND or V
2.5 V ≤ V
1.8 V ≤ V
2.5 V ≤ V
1.8 V ≤ V
V
V
CC
CC
2
)
≥ 2.5 V, I
< 2.5 V, I
SCL
CC
CC
CC
CC
CC
CC
= 400 kHz/1 MHz
= 2.5 V to 5.5 V, T
= 2.5 V to 5.5 V, T
≤ 5.5 V
< 2.5 V
≤ 5.5 V
< 2.5 V
OL
OL
CC
= 3.0 mA
= 1.0 mA
http://onsemi.com
Test Conditions
V
V
V
V
V
V
CC
IN
IN
IN
IN
IN
IN
< V
< V
< V
> V
= 0 V
= 0 V
3
A
A
IH
IH
IH
IH
, V
, V
, V
= −40°C to +125°C, unless otherwise specified.)
= −40°C to +125°C, unless otherwise specified.)
T
T
T
T
A
A
A
A
CC
CC
CC
= −40°C to +85°C
= −40°C to +125°C
= −40°C to +85°C
= −40°C to +125°C
CC
Conditions
= 5.5 V
= 3.3 V
= 1.8 V
), the strong pull−down reverts to a weak current source.
(Note 7)
(Note 7)
0.75 V
0.7 V
−0.5
−0.5
Min
CC
CC
Max
75
50
25
V
V
0.25 V
8
6
2
0.3 V
CC
CC
Max
0.4
0.2
1
3
2
5
1
2
+ 0.5
+ 0.5
CC
CC
Units
Units
pF
pF
mA
mA
mA
mA
mA
V
V
V
V
V
V