M24512-DFMC6TG STMicroelectronics, M24512-DFMC6TG Datasheet - Page 28

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M24512-DFMC6TG

Manufacturer Part Number
M24512-DFMC6TG
Description
EEPROM 512Kit I2C EEProm 128kB 1 MHz 1.7 5.5V
Manufacturer
STMicroelectronics
Datasheet

Specifications of M24512-DFMC6TG

Rohs
yes

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DC and AC parameters
28/40
Table 15.
1. If the application uses the voltage range F device with 2.5 V < V
2. For devices identified by process letters K: I
3. Only for devices identified with process letter K.
4. Characterized value, not tested in production.
5. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
I
V
please refer to
completion of the internal write cycle t
I
CC0
CC1
V
I
CC
CC
LO
LI
OL
IH
IL
Input leakage current
(E1, E2, SCL, SDA)
Output leakage current
Supply current (Read)
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24512-DF, device grade 6)
Table 13
Parameter
instead of this table.
Doc ID 16459 Rev 26
W
V
device in Standby mode
SDA in Hi-Z, external voltage
applied on SDA: V
V
V
During t
Device not selected
V
1.7 V V
1.7 V V
1.7 V V
I
(t
Test conditions
f
OL
c
IN
CC
CC
IN
W
= 1 MHz
= 1 mA, V
= V
= V
CC
is triggered by the correct decoding of a Write instruction).
= 1.7 V, f
= 1.6 V, f
to those in
(max) = 1.5 mA.
SS
SS
W
CC
CC
CC
M24512-W M24512-R M24512-DR M24512-DF
or V
or V
(3)
< 2.5 V
< 2.5 V
< 2.5 V
c
c
CC
CC
= 400 kHz
= 400 kHz
CC
, V
= 1.7 V
(1)
Table
SS
CC
(in addition
(5)
or V
CC
,
= 1.7 V
8)
< 5.5 V and -40 °C < TA < +85 °C,
CC
0.75 V
0.75 V
–0.45
Min.
-
-
-
-
-
-
-
CC
CC
0.25 V
V
CC
0.8
Max.
5
± 2
± 2
2.5
0.8
6.5
0.2
1
(4)
+0.6
(2)
CC
Unit
mA
mA
mA
mA
µA
µA
µA
V
V
V
V

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