M95256-DRDW6TP STMicroelectronics, M95256-DRDW6TP Datasheet - Page 35
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M95256-DRDW6TP
Manufacturer Part Number
M95256-DRDW6TP
Description
EEPROM 256Kbit SPI EEPROM 20 MHz 1.8V to 5.5V
Manufacturer
STMicroelectronics
Datasheet
1.M95256-DFDW6TP.pdf
(53 pages)
Specifications of M95256-DRDW6TP
Product Category
EEPROM
Rohs
yes
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M95256-W M95256-R M95256-DR M95256-DF
Table 17.
1. If the application uses the M95256-R and M95256-DR devices at 2.5 V V
2. Value tested only for previous M95256 devices identified by process letter A.
3. Only the M95256 devices identified by process letter K.
4. Characterized only, not tested in production.
5. 3 µA for previous M95256 devices identified by process letter A.
Symbol
to
I
CC0
I
V
V
I
V
I
CC1
V
I
Table 16: DC characteristics (M95256-W, device grade
LO
CC
OH
OL
LI
IH
IL
(4)
DC characteristics (M95256-R, M95256-DR, device grade 6)
Input leakage
current
Output leakage
current
Supply current
(Read)
Supply current
(Write)
Supply current
(Standby)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Parameter
V
S = V
V
at 2 MHz, Q = open
V
at 5 MHz, Q = open
V
V
1.8 V V
1.8 V V
I
I
OL
OH
IN
CC
CC
CC
CC
= 0.15 mA, V
= V
= –0.1 mA, V
= 1.8 V, C = 0.1 V
= 1.8 V, C = 0.1 V
= 1.8 V, during t
= 1.8 V, S = V
CC
SS
, voltage applied on Q = V
CC
CC
Doc ID 12276 Rev 19
or V
< 2.5 V
< 2.5 V
Test conditions
CC
CC
CC
6), rather than to the above table.
CC
= 1.8 V
= 1.8 V
W
, V
, S = V
CC
CC
IN
or 0.9 V
or 0.9 V
= V
CC
SS
(1)
CC
or V
CC
CC
SS
,
,
5.5 V and –40 °C T
CC
or V
CC
0.75 V
0.8 V
–0.45
Min.
DC and AC parameters
CC
A
CC
+85 °C, please refer
0.25 V
V
Max.
1
2
1
CC
± 2
± 2
0.3
3
(2)
(3)
(5)
+1
CC
Unit
35/53
mA
mA
µA
µA
µA
V
V
V
V
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