AT24C512C-SSHMEU-T Atmel, AT24C512C-SSHMEU-T Datasheet - Page 9

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AT24C512C-SSHMEU-T

Manufacturer Part Number
AT24C512C-SSHMEU-T
Description
EEPROM SERIAL EEPROM 512K (64KX8) 2-WIRE 1.7V
Manufacturer
Atmel
Datasheet

Specifications of AT24C512C-SSHMEU-T

Rohs
yes
Memory Size
512 KB
Organization
65536 x 8
Maximum Clock Frequency
1000 KHz
Maximum Operating Current
2 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Interface Type
2-Wire
Minimum Operating Temperature
- 40 C
Operating Current
2 mA
Factory Pack Quantity
100
Supply Voltage - Max
3.6 V
Supply Voltage - Min
1.7 V
7.
8.
Device Addressing
The 512K EEPROM requires an 8-bit device address word following a Start condition to enable the chip for a read or
write operation. The device address word consists of a mandatory ‘1010’ sequence for the first four most-significant
bits (see
The 512K uses the three device address bits, A2, A1, and A0, to allow as many as eight devices on the same bus. These
bits must compare to their corresponding hardwired input pins. The A
that biases them to a logic low condition if the pins are allowed to float.
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high,
and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a valid compare is not made, the device will
return to a standby state.
Figure 7-1. Device Address
Write Operations
Byte Write: A Byte Write operation requires two 8-bit data word addresses following the device address word and
acknowledgment. Upon receipt of this address, the EEPROM will again respond with a zero, and then the part is to
receive an 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a zero. The addressing
device, such as a microcontroller, then must terminate the write sequence with a Stop condition. At this time, the
EEPROM enters an internally-timed write cycle, t
cycle, and the EEPROM will not respond until the write is complete (see
Page Write: The 512-Kbit EEPROM is capable of 128-byte page writes.
A Page Write is initiated the same way as a byte write, but the microcontroller does not send a Stop condition after the
first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller
can transmit up to 127 more data words. The EEPROM will respond with a zero after each data word received. The
microcontroller must terminate the page write sequence with a Stop condition (see
internally timed write cycle will begin.
The lower seven bits of the data word address are internally incremented following the receipt of each data word. The
higher data word address bits are not incremented, retaining the memory page row location. When the word address,
internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more
than 128 data words are transmitted to the EEPROM, the data word address will roll-over, and the previous data will be
overwritten. The address roll over during write is from the last byte of the current page to the first byte of the same page.
Acknowledge Polling: Once the internally-timed write cycle has started and the EEPROM inputs are disabled,
Acknowledge Polling can be initiated. This involves sending a Start condition followed by the device address word. The
read/write select bit is representative of the operation desired. Only if the internal write cycle has completed will the
EEPROM respond with a zero, allowing the read or write sequence to continue.
Data Security: AT24C512C has a hardware data protection scheme that allows the user to write protect the entire
memory when the WP pin is at V
MSB
1
Figure 7-1
0
1
0
below). This is common to all 2-wire EEPROM devices.
A2 A1 A0 R/W
CC
LSB
.
WR
, to the nonvolatile memory. All inputs are disabled during this write
2
, A
Figure 9-1 on page
1
, and A
Atmel AT24C512C [DATASHEET]
0
pins use an internal proprietary circuit
Figure 9-2 on page
10).
8720C–SEEPR–7/12
10) and the
9

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