MCF52236AF50A Freescale Semiconductor, MCF52236AF50A Datasheet - Page 31

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MCF52236AF50A

Manufacturer Part Number
MCF52236AF50A
Description
32-bit Microcontrollers - MCU KIRIN2E EPP - REVA
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MCF52236AF50A

Core
ColdFire V2
Processor Series
MCF52235
Data Bus Width
32 bit
Maximum Clock Frequency
50 MHz
Program Memory Size
256 KB
Data Ram Size
32 KB
On-chip Adc
Yes
Operating Supply Voltage
3 V to 3.6 V
Operating Temperature Range
0 C to + 70 C
Package / Case
LQFP-80
Mounting Style
SMD/SMT
A/d Bit Size
10 bit, 12 bit
A/d Channels Available
8
Interface Type
I2C, QSPI, UART
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Number Of Programmable I/os
56
Number Of Timers
4
Program Memory Type
Flash
Supply Voltage - Max
3.6 V
Supply Voltage - Min
3 V
The average chip-junction temperature (T
where
For most applications, PI/O < P
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from
for a known T
for any value of T
2.2
Freescale Semiconductor
1
ESD target for Human Body Model
ESD target for Charged Device Model
HBM circuit description
Number of pulses per pin (HBM)
positive pulses
negative pulses
Number of pulses per pin (CDM)
positive pulses
negative pulses
Interval of pulses (HBM)
Interval of pulses (CDM)
T
P
P
P
A device is defined as a failure if the device no longer meets the device specification requirements after
exposure to ESD pulses. Complete DC parametric and functional testing is performed per applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
A
D
INT
I/O
JMA
ESD Protection
= ambient temperature, C
= P
= power dissipation on input and output pins — user determined
A
= chip internal power, I
. Using this value of K, the values of P
= package thermal resistance, junction-to-ambient, C/W
INT
A
.
+ P
I/O
Characteristic
INT
MCF52235 ColdFire Microcontroller Data Sheet, Rev. 10
and can be ignored. An approximate relationship between P
DD
Table 21. ESD Protection Characteristics
K
 V
J
=
) in C can be obtained from
P
DD
D
P
T
, watts
J
D
=
=
T
A
D
T
K
A
+
and T
+
273C
Symbol
T
R
P
HBM
CDM
J
J
series
D
can be obtained by solving
C
+
273C
+
JMA
JMA
1500 (ADC and EPHY pins)
2000 (All other pins)
P
D
2
Equation 3
Value
1500
250
100
1.0
0.2
1
1
3
3
1
Equation 1
by measuring P
D
and T
Electrical Characteristics
and
J
(if P
Equation 2
Units
ohms
I/O
D
sec
sec
pF
V
V
(at equilibrium)
is neglected) is:
iteratively
Eqn. 1
Eqn. 2
Eqn. 3
31

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