MAX1180ECM-TD Maxim Integrated, MAX1180ECM-TD Datasheet - Page 5

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MAX1180ECM-TD

Manufacturer Part Number
MAX1180ECM-TD
Description
Analog to Digital Converters - ADC
Manufacturer
Maxim Integrated
Datasheet

Specifications of MAX1180ECM-TD

Number Of Channels
2
Architecture
Pipeline
Conversion Rate
105 MSPs
Resolution
10 bit
Input Type
Single-Ended/Differential
Snr
59 dB
Interface Type
Parallel
Operating Supply Voltage
3.3 V
Maximum Operating Temperature
+ 85 C
Package / Case
TQFP EP
Maximum Power Dissipation
511 mW
Minimum Operating Temperature
- 40 C
Number Of Converters
2
Voltage Reference
Internal, External
ELECTRICAL CHARACTERISTICS (continued)
(V
10kΩ resistor, V
T
Note 1: Equivalent dynamic performance is obtainable over full OV
Note 2: Specifications at ≥ +25°C are guaranteed by production test and < +25°C are guaranteed by design and characterization.
Note 3: SNR, SINAD, THD, SFDR, and HD3 are based on an analog input voltage of -0.5dBFS, referenced to a 1.024V full-scale
Note 4: Intermodulation distortion is the total power of the intermodulation products relative to the individual carrier. This number is
Note 5: Digital outputs settle to V
Note 6: With REFIN driven externally, REFP, COM, and REFN are left floating while powered down.
MAX
Output Supply Current
Power Dissipation
Power-Supply Rejection Ratio
TIMING CHARACTERISTICS
CLK Rise to Output Data Valid
Output Enable Time
Output Disable Time
CLK Pulse-Width High
CLK Pulse-Width Low
Wake-Up Time (Note 6)
CHANNEL-TO-CHANNEL MATCHING
Crosstalk
Gain Matching
Phase Matching
DD
, unless otherwise noted. Typical values are at T
= 3.3V, OV
with Internal Reference and Parallel Outputs
input voltage range.
6dB or better, if referenced to the two-tone envelope.
PARAMETER
Dual 10-Bit, 105Msps, 3.3V, Low-Power ADC
IN
DD
= 2V
= 2.5V; 0.1µF and 1.0µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through a
_______________________________________________________________________________________
P-P
(differential with respect to COM), C
IH
, V
SYMBOL
t
t
DISABLE
ENABLE
PDISS
IL
I
t
PSRR
OVDD
WAKE
t
t
. Parameter guaranteed by design.
t
DO
CH
CL
Operating, C
-0.5dBFS
Sleep mode
Shutdown, clock idle, PD = OE = OV
Operating, f
Sleep mode
Shutdown, clock idle, PD = OE = OV
Offset
Gain
Figure 3 (Note 5)
Figure 4
Figure 4
Figure 3, clock period: 9.5ns
Figure 3, clock period: 9.5ns
Wakeup from sleep mode
Wakeup from shutdown
f
f
f
INA or B
INA or B
INA or B
A
= +25°C.) (Note 2)
= 20MHz at -0.5dBFS
= 20MHz at -0.5dBFS
= 20MHz at -0.5dBFS
INA or B
L
L
= 15pF , f
CONDITIONS
= 10pF at digital outputs (Note 1), f
DD
= 20MHz at -0.5dBFS
range with reduced C
INA or B
= 20MHz at
DD
DD
L
.
MIN
CLK
= 105.263MHz, T
TYP
±0.2
±0.1
4.75
±1.5
4.75
±1.5
0.18
0.02
0.25
100
413
-70
9.2
1.5
1.5
15
10
2
3
5
MAX
±0.2
511
10
50
8
A
= T
degrees
UNITS
mV/V
mW
%/V
MIN
mA
µW
dB
dB
µA
ns
ns
ns
ns
ns
µs
to
5

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