LCMXO2280E-4BN256C Lattice, LCMXO2280E-4BN256C Datasheet - Page 9

• Manufacturer Part Number: LCMXO2280E-4BN256C
• Description: CPLD - Complex Programmable Logic Devices 2280 LUTs 211 I/O 1.2V -4 SPD
• Manufacturer: Lattice

Specifications of LCMXO2280E-4BN256C

• Rohs: yes
• Memory Type: SRAM
• Number Of Macrocells: 1140
• Delay Time: 4.4 ns
• Number Of Programmable I/os: 211
• Operating Supply Voltage: 1.2 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: 0 C
• Package / Case: CABGA
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 595
• Supply Current: 20 mA
• Supply Voltage - Max: 1.26 V
• Supply Voltage - Min: 1.14 V

TEST
Moisture
Resistance
Temperature
Humidity Bias
85/85
THBS
or
Biased HAST
BHAST
Physical
Dimensions
Ball Shear
INDEX Return
STANDARD
Lattice Procedure
# 70-101571,
JESD22-A101B
JESD22-A110B
Lattice Procedure
# 70-100211,
MIL-STD- 883 Method
2016 or applicable
LSC case outline
drawings
Lattice Procedure
# 70-104056
# 70-100433
TEST CONDITIONS
Biased to maximum
operating Vcc, 85° C,
85% Relative Humidity,
1000 hours
Or,
Biased to maximum
operating Vcc, 2atm.
Pressure,
264 hrs, 110 C,
85% Relative Humidity
Measure all dimensions
listed on the case
outline.
Per Package Type
9
45 devices/lot
2-3 lots
5 devices
3 devices per
package / 30
balls each unit
SAMPLE SIZE
(Typical)
Lattice Semiconductor Corporation Doc. #25-106923 Rev. F
PERFORMED ON
Design, Foundry
Process, Package
Qualification
Plastic Packages only
Package Qualification
Package Qualification