IS42S16100E-6BLI ISSI, IS42S16100E-6BLI Datasheet

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IS42S16100E-6BLI

Manufacturer Part Number
IS42S16100E-6BLI
Description
DRAM 16M 1Mx16 166Mhz SDRAM, 3.3v
Manufacturer
ISSI
Datasheet

Specifications of IS42S16100E-6BLI

Rohs
yes
Data Bus Width
16 bit
Organization
1 Mbit x 16
Package / Case
BGA-60
Memory Size
16 Mbit
Maximum Clock Frequency
166 MHz
Access Time
6 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
3 V
Maximum Operating Current
180 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Factory Pack Quantity
117
IS42S16100E
IS45S16100E
FEATURES
• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a
• Two banks can be operated simultaneously and
• Dual internal bank controlled by A11 (bank select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
• Programmable burst sequence:
• 2048 refresh cycles every 32ms (Com, Ind, A1
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
• Burst termination by burst stop and
• Byte controlled by LDQM and UDQM
• Packages: 400-mil 50-pin TSOP-II and 60-ball
• Temperature Grades:
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
05/18/2010
512K Words x 16 Bits x 2 Banks
16Mb SYNCHRONOUS DYNAMIC RAM
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can rea-
sonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applica-
tions unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
positive clock edge
independently
– (1, 2, 4, 8, full page)
Sequential/Interleave
grade) or 16ms (A2 grade)
operations capability
precharge command
TF-BGA
Commercial (0
Industrial (-40
Automotive A1 (-40
Automotive A2 (-40
o
C to +85
o
C to +70
o
o
C to +85
C to +105
o
C)
o
C)
o
C)
o
C)
DESCRIPTION
ISSI
organized as a 524,288-word x 16-bit x 2-bank for
improved performance. The synchronous DRAMs
achieve high-speed data transfer using pipeline
architecture. All inputs and outputs signals refer to the
rising edge of the clock input.
’s 16Mb Synchronous DRAM IS42/4516100E is
JUNE 2010
1

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