MAX2602E/D Maxim Integrated, MAX2602E/D Datasheet - Page 2

• Manufacturer Part Number: MAX2602E/D
• Description: Transistors RF Bipolar Power
• Manufacturer: Maxim Integrated
• Series: MAX2601, MAX2602r

Specifications of MAX2602E/D

• Configuration: Single Dual Base Dual Collector Quad Emitter
• Dc Collector/base Gain Hfe Min: 100
• Maximum Operating Frequency: 900 MHz
• Collector- Emitter Voltage Vceo Max: 17 V
• Emitter- Base Voltage Vebo: 2.3 V
• Continuous Collector Current: 200 mA
• Maximum Dc Collector Current: 1.2 A
• Power Dissipation: 6.4 W
• Transistor Polarity: NPN

3.6V, 1W RF Power Transistors
for 900MHz Applications
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage, Shorted Base (V
Emitter Base Reverse Voltage (V
BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V
Average Collector Current (I
Continuous Power Dissipation (T
DC ELECTRICAL CHARACTERISTICS
(T
AC ELECTRICAL CHARACTERISTICS
(Test Circuit of Figure 1, V
erwise noted.)
Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section).
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 2: Guaranteed by design.
Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric
2
Collector-Emitter Breakdown
Voltage
Collector-Emitter Sustaining
Voltage
Collector-Base Breakdown
Voltage
DC Current Gain
Collector Cutoff Current
Output Capacitance
Frequency Range
Base Current
Harmonics
Power Gain
Collector Efficiency
Stability under Continuous
Load Mismatch Conditions
Two-Tone IMR
Noise Figure
A
SOIC (derate 80mW/°C above +70°C) (Note 1) .............6.4W
= T
_______________________________________________________________________________________
MIN
degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation
capability is observed.
PARAMETER
PARAMETER
to T
MAX
, unless otherwise noted.)
CC
C
)........................................1200mA
= 3.6V, V
EBO
A
= +70°C)
SYMBOL
SYMBOL
)...................................2.3V
2fo, 3fo
BV
BV
LV
BV
V
I
C
h
IM3
IM5
CES
NF
BB
SWR
I
CEO
CBO
η
CEO
FE
OB
CES
f
B
= 0.750V, Z
CES
) ....................17V
I
I
I
I
V
V
(Note 2)
V
V
P
No modulation
V
P
f2 = 836MHz
V
C
C
C
C
CE
CB
CC
CC
OUT
CC
OUT
BB
< 100µA
= 200mA
< 100µA, emitter open
= 250mA, V
= 6V, V
= 0.9V
= 3V, I
= 3.6V, P
= 3.0V, P
= 5.5V, all angles (Note 3)
= 30dBm
= +30dBm total power, f1 = 835MHz,
LOAD
E
BE
= Z
= 0mA, f = 1MHz
OUT
OUT
CE
= 0V
CONDITIONS
SOURCE
CONDITIONS
= 3V
= 30dBm
= 29dBm
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +165°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
Open base
Shorted base
= 50Ω, P
OUT
= 30dBm, f = 836MHz, T
MIN
MIN
100
5.0
DC
15
15
15
0.05
TYP
TYP
11.6
9.6
4.2
-43
-42
8:1
-16
-25
3.3
58
A
= +25°C, unless oth-
MAX
MAX
1.5
1
UNITS
UNITS
GHz
dBc
dBc
dBc
mA
µA
dB
dB
pF
%
V
V
V