MAX2602E/D Maxim Integrated, MAX2602E/D Datasheet

MAX2602E/D

Manufacturer Part Number

MAX2602E/D

Description

Transistors RF Bipolar Power

Manufacturer

Maxim Integrated

Series

MAX2601, MAX2602r

Datasheet

1.MAX2602ED.pdf (6 pages)

Specifications of MAX2602E/D

Configuration

Single Dual Base Dual Collector Quad Emitter

Dc Collector/base Gain Hfe Min

100

Maximum Operating Frequency

900 MHz

Collector- Emitter Voltage Vceo Max

17 V

Emitter- Base Voltage Vebo

2.3 V

Continuous Collector Current

200 mA

Maximum Dc Collector Current

1.2 A

Power Dissipation

6.4 W

Transistor Polarity

NPN

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The MAX2601/MAX2602 are RF power transistors opti-

mized for use in portable cellular and wireless equipment

that operates from three NiCd/NiMH cells or one Li-Ion

cell. These transistors deliver 1W of RF power from a

3.6V supply with efficiency of 58% when biased for con-

stant-envelope applications (e.g., FM or FSK). For NADC

(IS-54) operation, they deliver 29dBm with -28dBc ACPR

from a 4.8V supply.

The MAX2601 is a high-performance silicon bipolar RF

power transistor. The MAX2602 includes a high-

performance silicon bipolar RF power transistor, and a

biasing diode that matches the thermal and process

characteristics of the power transistor. This diode is

used to create a bias network that accurately controls

the power transistor’s collector current as the tempera-

ture changes.

The MAX2601/MAX2602 can be used as the final stage

in a discrete or module power amplifier. Silicon bipolar

technology eliminates the need for voltage inverters

and sequencing circuitry, as required by GaAsFET

power amplifiers. Furthermore, a drain switch is not

required to turn off the MAX2601/MAX2602. This

increases operating time in two ways: it allows lower

system end-of-life battery voltage, and it eliminates the

wasted power from a drain-switch device.

The MAX2601/MAX2602 are available in thermally

enhanced, 8-pin SO packages, which are screened to

the extended temperature range (-40°C to +85°C).

________________________Applications

19-1185; Rev 3; 9/08

Typical Application Circuit appears at end of data sheet.

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,

or visit Maxim’s website at www.maxim-ic.com.

Narrow-Band PCS (NPCS)

915MHz ISM Transmitters

Microcellular GSM (Power Class 5)

AMPS Cellular Phones

Digital Cellular Phones

Two-Way Paging

CDPD Modems

Land Mobile Radios

________________________________________________________________ Maxim Integrated Products

General Description

3.6V, 1W RF Power Transistors

for 900MHz Applications

♦ ♦ Low Voltage: Operates from 1 Li-Ion or

♦ ♦ DC-to-Microwave Operating Range

♦ ♦ 1W Output Power at 900MHz

♦ ♦ On-Chip Diode for Accurate Biasing (MAX2602)

♦ ♦ Low-Cost Silicon Bipolar Technology

♦ ♦ Does Not Require Negative Bias or Supply Switch

♦ ♦ High Efficiency: 58%

____________________________Features

MAX2601ESA

MAX2602ESA

3 NiCd/NiMH Batteries

TOP VIEW

PART

MAX2601

PSOPII

-40°C to +85°C

TEMP RANGE

Ordering Information

Pin Configurations

BIAS

MAX2602

PSOPII

PIN-PACKAGE

8 SOIC

Related parts for MAX2602E/D

MAX2602E/D Summary of contents

Page 1

... Two-Way Paging CDPD Modems Land Mobile Radios Typical Application Circuit appears at end of data sheet. ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. 3.6V Power Transistors for 900MHz Applications ____________________________Features ♦ ...

Page 2

RF Power Transistors for 900MHz Applications ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage, Shorted Base (V Emitter Base Reverse Voltage (V )...................................2.3V EBO BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V Average Collector Current (I )........................................1200mA C Continuous Power Dissipation (T ...

Page 3

Operating Characteristics (Test Circuit of Figure 1, input/output matching networks optimized for specific measurement frequency 30dBm 50Ω 836MHz, T OUT LOAD SOURCE COLLECTOR CURRENT 1.0 0 1.00V BB ...

Page 4

RF Power Transistors for 900MHz Applications V BB 0.1μF 1000pF 2pF L1 = COILCRAFT A05T INDUCTOR, 18.5nH T1 1", 50Ω TRANSMISSION LINE ON FR-4 Figure 1. Test Circuit _______________Detailed Description MAX2601/MAX2602 The MAX2601/MAX2602 ...

Page 5

Applications Information Optimum Port Impedance The source and load impedances presented to the MAX2601/MAX2602 have a direct impact upon its gain, output power, and linearity. Proper source- and load- terminating impedances (Z and Z S power transistor base and collector ...

Page 6

... Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 6 _____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 © 2008 Maxim Integrated Products DESCRIPTION Maxim is a registered trademark of Maxim Integrated Products, Inc ...

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