BC847SE6327BTSA1 Infineon, BC847SE6327BTSA1 Datasheet
BC847SE6327BTSA1
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BC847SE6327BTSA1 Summary of contents
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NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistors with good matching in one package • BC846S / U, BC847S: For ...
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Maximum Ratings Parameter Collector-emitter voltage BC846S/U BC847S Collector-base voltage BC846S/U BC847S Emitter-base voltage Collector current ≤ Peak collector current Total power dissipation- ≤ 115 °C, BC846S, BC847S ≤ 118 °C, BC846U S Junction ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BC846S mA BC847S C B Collector-base breakdown voltage µA, I ...
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Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance V = 0.5 V, ...
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DC current gain 100 - Base-emitter ...
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Transition frequency MHz Total power dissipation P BC846S, BC847S 300 mW 250 225 200 175 ...
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Permissible Pulse Load R BC846S, BC847S 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS ...
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Package Outline 2.9 (2.25 Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel ...
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Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...
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