CBTD16212DGG,112 NXP Semiconductors, CBTD16212DGG,112 Datasheet - Page 4

• Manufacturer Part Number: CBTD16212DGG,112
• Description: IC FET BUS EXCH SWCH 56-TSSOP
• Manufacturer: NXP Semiconductors
• Series: 74CBTDr
• Type: Bus FET Exchange Switchr

Specifications of CBTD16212DGG,112

• Circuit: 12 x 2:2
• Independent Circuits: 1
• Current - Output High, Low: 15mA, 64mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 56-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 935270186112; CBTD16212DGG; CBTD16212DGG

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1. All typical values are at V
2. This is the increase in supply current for each input that is at the specified TTL voltage level rather than V
3. Measured by the voltage drop between the A and the B terminals at the indicated current through the switch.
Philips Semiconductors
ABSOLUTE MAXIMUM RATINGS
NOTES:
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
NOTES:
2001 Sep 28
SYMBOL
SYMBOL
SYMBOL
SYMBOL
C
24-bit level shifting bus exchange switch
with 12-bit output enables
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 C.
On-state resistance is determined by the lowest voltage of the two (A or B) terminals.
V
IO(OFF)
T
I
V
V
T
r
OUT
V
V
I
V
V
I
OUT
amb
C
on
V
CC
I
CC
IK
stg
CC
I
I
IH
CC
IL
IK
P
I
I
I
3
3
DC supply voltage
DC input diode current
DC input voltage
DC output voltage
DC output current
Storage temperature range
DC supply voltage
High-level input voltage
Low-level Input voltage
Operating free-air temperature range
Input clamp voltage
Output high pass voltage
Input leakage current
Input leakage current
Quiescent supply current
Additional supply current per
input pin
Control pins
Port OFF capacitance
A1 to A2
PARAMETER
2
CC
PARAMETER
3
= 5 V, T
3
amb
1, 2
= 25 C
PARAMETER
PARAMETER
V
See Figure 1, page 6
V
V
V
V
other inputs at V
V
V
V
V
V
CC
CC
CC
CC
CC
I
O
CC
CC
CC
= 3 V or 0 V
= 3 V or 0 V; S0, S1, S2 = 0 V
= 4.5 V; I
= 5.5 V; V
= 5.5 V; I
= 5.5 V, one input at 3.4 V,
= 4.5 V; V
= 4.5 V; V
= 4.5 V; V
= 0 V; V
I
TEST CONDITIONS
I
O
= 5.5 V
I
1
1
1
= –18 mA
= GND or 5.5 V
= 0, V
CC
= 0 V; I
= 0 V; I
= 2.4 V; I
or GND
output in Off or High state
I
= V
4
I
I
output in Low state
= 64 mA
= 30 mA
I
CONDITIONS
CC
= 15 mA
or GND
V
I
< 0
Min
–40
4.5
2.0
—
Min
—
—
—
—
—
—
—
—
—
—
—
T
amb
LIMITS
CC
–0.5 to +7.0
–0.5 to +7.0
–0.5 to +5.5
–65 to 150
= –40 to +85 C
RATING
or GND.
LIMITS
Typ
–50
128
11.5
4.5
—
—
—
—
—
—
16
5
5
1
Max
+85
5.5
0.8
—
CBTD16212
Max
–1.2
–1.2
3.5
2.5
10
35
—
—
8
8
1
Product data
UNIT
UNIT
UNIT
mA
mA
V
V
V
V
V
V
C
C
UNIT
mA
mA
pF
pF
V
V
A
A