IPB100N04S303ATMA1 Infineon, IPB100N04S303ATMA1 Datasheet - Page 7

• Manufacturer Part Number: IPB100N04S303ATMA1
• Description: Mosfet n-Ch 40v 100a To263-3
• Manufacturer: Infineon

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
4000
3500
3000
2500
2000
1500
1000
= f(T
= f(Q
500
12
10
0
8
6
4
2
0
25
0
j
)
gate
40 A
80 A
20 A
D
); I
DD
20
D
= 80 A pulsed
75
40
Q
T
gate
j
60
[°C]
[nC]
125
80
8 V
100
32 V
120
175
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
V
GS
GS
52
48
44
40
36
32
-60
= f(T
Q
Q
gs
gs
j
IPI100N04S3-03, IPP100N04S3-03
); I
-20
D
= 1 mA
Q
Q
20
g
g
Q
Q
T
gd
gd
j
60
[°C]
IPB100N04S3-03
100
Q
Q
gate
gate
140
2007-05-03
180