IPB100N04S204ATMA1 Infineon, IPB100N04S204ATMA1 Datasheet - Page 6

• Manufacturer Part Number: IPB100N04S204ATMA1
• Description: Mosfet n-Ch 40v 100a To263-3
• Manufacturer: Infineon

Rev. 1.0
9 Typ. Drain-source on-state resistance
R
parameter: I
11 Typ. capacitances
C = f(V
DS(ON)
10
10
10
5
4
3
2
1
-60
DS
4
3
2
= f(T
0
); V
D
j
)
GS
= 80 A; V
-20
= 0 V; f = 1 MHz
5
20
10
GS
= 10 V
T
V
j
DS
60
[°C]
15
[V]
100
20
140
25
Crss
Coss
Ciss
180
30
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
3.5
2.5
1.5
0.5
10
10
10
10
= f(T
4
3
2
1
0
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
= V
0.4
175 °C
20
DS
250µA
0.6
V
T
SD
j
25 °C
60
[°C]
[V]
0.8
1250µA
IPB100N04S2-04
IPP100N04S2-04
100
1
140
2006-03-02
1.2
180
1.4