2PB710AR T/R NXP Semiconductors, 2PB710AR T/R Datasheet - Page 3
2PB710AR T/R
Manufacturer Part Number
2PB710AR T/R
Description
Semiconductors and Actives, pnp, Transistors, transistor, Discretes (diodes, transistors, thyristors ...)
Manufacturer
NXP Semiconductors
Datasheet
1.2PB710AR.pdf
(8 pages)
Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 May 31
R
I
I
h
V
V
C
f
SYMBOL
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
th j-a
c
PNP general purpose transistor
= 25 C unless otherwise specified.
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
collector capacitance
transition frequency
thermal resistance from junction to ambient
2PB710AQ
2PB710AR
2PB710AS
2PB710AQ
2PB710AR
2PB710AS
p
300 s;
PARAMETER
0.02.
PARAMETER
I
I
I
I
I
I
I
I
f = 100 MHz; note 1
E
E
C
C
C
C
C
E
C
= 0; V
= 0; V
= 0; V
= 150 mA; V
= 500 mA; V
= 300 mA; I
= 300 mA; I
= i
= 50 mA; V
e
= 0; V
CB
CB
EB
3
= 60 V
= 60 V; T
= 5 V
CONDITIONS
CB
CE
B
B
= 10 V; f = 1 MHz
CE
CE
= 30 mA; note 1
= 30 mA; note 1
= 10 V;
note 1
= 10 V; note 1
= 10 V; note 1
CONDITIONS
j
= 150 C
85
120
170
40
100
120
140
MIN.
VALUE
500
Product specification
170
240
340
15
10
5
10
600
1.5
MAX.
2PB710A
UNIT
K/W
nA
nA
mV
V
pF
MHz
MHz
MHz
A
UNIT