BCR22PNH6327XTSA1 Infineon, BCR22PNH6327XTSA1 Datasheet

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NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated NPN/PNP Transistors in one package • Built in bias resistor NPN and PNP (R =22 kΩ, R =22 kΩ • ...

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Electrical Characteristics at T Parameter DC Characteristics for NPN and PNP Types Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Collector cutoff current V ...

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NPN Type DC Current Gain (common emitter configuration -40 °C -25 °C 25 °C 85 °C 125 ° Input ...

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PNP Type DC Current Gain (common emitter configuration -40 °C 10 -25 °C 25 °C 85 °C 125 ° Input ...

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Total power dissipation P 300 mW 250 225 200 175 150 125 100 Permissible Pulse Load K 0.5 0.2 0.1 0.05 0.02 0 ...

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Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

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... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...