BTS117E3045ANT Infineon, BTS117E3045ANT Datasheet - Page 2

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BTS117E3045ANT

Manufacturer Part Number
BTS117E3045ANT
Description
Manufacturer
Infineon
Datasheet
Thermal resistance
junction - case:
junction - ambient:
SMD version, device on PCB:
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Drain source voltage
Drain source voltage for short circuit protection
Continuous input current
-0.2V ≤ V
V
Operating temperature
Storage temperature
Power dissipation
T
Unclamped single pulse inductive energy
I
Electrostatic discharge voltage
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection V
V
t
t
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
1 In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3).
2 V
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Drain connection.
PCB mounted vertical without blown air.
D(ISO)
d
d
C
IN
IN
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
= 400 ms, R
= 400 ms, R
= 25 °C
=low or high; V
< -0.2V or V
= 3.5 A
IN
≤ 10V
I
I
= 2 Ω, I
= 2 Ω, I
IN
A
> 10V
=13.5 V
D
D
LoadDump
=0,5*3.5A
= 3.5A
1)
3)
(Human Body Model)
2)
= V
A
+ V
Page 2
S
R
R
R
Symbol
V
V
I
T
T
P
E
V
V
IN
j
stg
DS
DS(SC)
tot
AS
ESD
LD
thJC
thJA
thJA
- 40 ... +150
- 55 ... +150
40/150/56
| I
no limit
Value
1000
3000
IN
2.5
75
45
60
32
50
75
70
E
| ≤ 2
19.05.2000
BTS 117
K/W
Unit
V
mA
°C
W
mJ
V

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