MAC4DLM-001 ONSEMI [ON Semiconductor], MAC4DLM-001 Datasheet

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MAC4DLM-001

Manufacturer Part Number
MAC4DLM-001
Description
Sensitive Gate Triacs Silicon Bidirectional Thyristors
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
MAC4DLM
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
applications such as motor control; process control; temperature, light
and speed control.
Features
1. V
MAXIMUM RATINGS
August, 2004 − Rev. 2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Peak Repetitive Off−State Voltage (Note 1)
On−State RMS Current
Peak Non-Repetitive Surge Current
Circuit Fusing Consideration
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Designed for high volume, low cost, industrial and consumer
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Four−Quadrant Triggering
Blocking Voltage to 600 V
On−State Current Rating of 4.0 Amperes RMS at 93 C
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Semiconductor Components Industries, LLC, 2004
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(T
50 to 60 Hz, Gate Open)
(Full Cycle Sine Wave, 60 Hz,
T
(One Full Cycle, 60 Hz, T
(t = 8.3 msec)
(Pulse Width
(t = 8.3 msec, T
(Pulse Width
(Pulse Width
DRM
C
J
= 93 C)
= −40 to 110 C, Sine Wave,
and V
RRM
Rating
Machine Model, C u 400 V
10 msec, T
10 msec, T
10 msec, T
C
for all types can be applied on a continuous basis. Blocking
= 93 C)
(T
J
= 25 C unless otherwise noted)
J
C
C
C
Preferred Device
= 110 C)
= 93 C)
= 93 C)
= 93 C)
Symbol
I
V
P
V
T(RMS)
I
P
V
I
T
DRM,
TSM
G(AV)
RRM
I
GM
T
GM
GM
stg
2
J
t
−40 to
−40 to
Value
600
150
110
4.0
6.6
0.5
0.1
0.2
5.0
40
1
A
Unit
2
W
W
V
A
A
A
V
sec
C
C
1 2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
2
3
3
1
2
3
4
MT2
ORDERING INFORMATION
4
4.0 AMPERES RMS
4
Y
WW
http://onsemi.com
http://onsemi.com
PIN ASSIGNMENT
CASE 369C
CASE 369D
600 VOLTS
STYLE 6
STYLE 6
DPAK−3
DPAK
TRIACS
= Year
= Work Week
Publication Order Number:
Main Terminal 1
Main Terminal 2
Main Terminal 2
Gate
G
DIAGRAMS
MARKING
MT1
MAC4DLM/D
4DLM
4DLM
YWW
YWW
AC
AC

Related parts for MAC4DLM-001

MAC4DLM-001 Summary of contents

Page 1

... VOLTS MT2 MT1 G MARKING DIAGRAMS 4 YWW DPAK AC CASE 369C 4DLM STYLE YWW DPAK−3 AC CASE 369D 4DLM STYLE Year WW = Work Week PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Publication Order Number: MAC4DLM/D ...

Page 2

... Duty Cycle ORDERING INFORMATION Device MAC4DLM−001 MAC4DLMT4 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAC4DLM ( unless otherwise noted; Electricals apply in both directions) J Symbol I DRM, ...

Page 3

... Quadrant II (−) I GATE I − GT Quadrant III (−) I GATE All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. MAC4DLM (Bidirectional Device) on state RRM RRM Quadrant 3 MainTerminal 2 − Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) ...

Page 4

... V , INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) T Figure 3. On−State Characteristics 8.0 7.0 Q4 6.0 5.0 Q3 4.0 Q2 3.0 Q1 2.0 1.0 0 −40 −25 −10 5 JUNCTION TEMPERATURE ( C) J Figure 5. Typical Gate Trigger Current versus Junction Temperature MAC4DLM 6.0 5 CONDUCTION ANGLE 90 3.0 2.0 120 1.0 180 dc 0 3.0 3.5 4.0 0 0.5 Figure 2. On−State Power Dissipation 1.0 = 110 C J 0.1 0.01 3.0 3.5 4.0 0.1 Figure 4. Transient Thermal Response 1 ...

Page 5

... Gate−MT1 Resistance 200 V RMS ADJUST FOR CHARGE TRIGGER CONTROL CHARGE NON-POLAR Note: Component values are for verification of rated (di/dt) Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) MAC4DLM 12 10 8.0 Q2 6 110 − ...

Page 6

... 0.13 (0.005) M 5.80 0.228 MAC4DLM PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT 6.20 3.0 0.244 0.118 2.58 0.101 1.6 6.172 0.063 0.243 mm SCALE 3:1 inches http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 7

... −T− SEATING K PLANE 0.13 (0.005) M MAC4DLM PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE http://onsemi.com 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN ...

Page 8

... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MAC4DLM/D ...

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