Q67040-S4375 INFINEON [Infineon Technologies AG], Q67040-S4375 Datasheet
Q67040-S4375
Related parts for Q67040-S4375
Q67040-S4375 Summary of contents
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... Soft switching • Low reverse recovery charge • Low forward voltage • 175°C operating temperature • Easy paralleling Type Package IDP45E60 P-TO220-2-2. IDB45E60 P-TO220-3.SMD Q67040-S4375 Maximum Ratings Parameter Repetitive peak reverse voltage Continous forward current T =25° =90° ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Reverse leakage current ...
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Electrical Characteristics Parameter Dynamic Characteristics Reverse recovery time V =400V, I =45A, di /dt=1000A/µ =400V, I =45A, di /dt=1000A/µ =400V, I =45A, di /dt=1000A/µ ...
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Power dissipation tot C parameter ≤ 175 °C 195 W 165 150 135 120 105 100 3 Typ. diode forward current I ...
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Typ. reverse recovery time (di /dt parameter 400V 450 ns 350 300 250 200 150 100 200 300 400 500 600 7 Typ. reverse recovery current ...
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Max. transient thermal impedance thJC p parameter : IDP45E60 10 K single pulse - ...
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Rev symbol Page 7 IDP45E60 IDB45E60 TO-220-2-2 dimensions [mm] [inch] min max min max A 9.70 10.10 0.3819 0.3976 B 15.30 ...
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Rev.2 TO-220-3-45 (P-TO220SMD) dimensions [mm] symbol min max A 9.80 10.00 1.3 typ 1.25 1.75 D 0.95 1.15 2.54 typ 0.72 0.85 5.08 typ 4.30 4.50 K 1.28 1.40 L 9.00 9.40 M 2.30 ...
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Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...