Q67040-S4368 INFINEON [Infineon Technologies AG], Q67040-S4368 Datasheet

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Q67040-S4368

Manufacturer Part Number
Q67040-S4368
Description
Silicon Carbide Schottky Diode
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
• Ideal diode for Power Factor
• No forward recovery
Type
SDP04S60
SDD04S60
SDT04S60
Maximum Ratings, at T
Parameter
Continuous forward current,
RMS forward current,
Surge non repetitive forward current, sine halfwave
T
Repetitive peak forward current
T
Non repetitive peak forward current
t
i
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation,
Operating and storage temperature
p
C
j
2
Correction up to 800W
=10µs, T
=150°C, T
material - Silicon Carbide
the switching behavior
t value,
=25°C, t
C
p
C
=25°C
T
=10ms
C
=100°C, D=0.1
=25°C, t
Package
P-TO220-3-1.
P-TO252-3-1.
P-TO220-2-2.
T
p
=10ms
C
=25°C
f=50Hz
1)
j
= 25 °C, unless otherwise specified
T
C
=100°C
Ordering Code
Q67040-S4369
Q67040-S4368
Q67040-S4445
P-TO220-2-2.
Final data
Page 1
Symbol
I
I
I
I
I
∫i
V
V
P
T
F
FRMS
FSM
FRM
FMAX
2
j ,
RRM
RSM
tot
dt
T
Marking
D04S60
D04S60
D04S60
P-TO252-3-1.
stg
SDP04S60, SDD04S60
Product Summary
V
Q
I
F
Pin 1
-55... +175
n.c.
n.c.
RRM
c
C
Value
12.5
0.78
36.5
600
600
5.6
18
40
4
P-TO220-3-1.
PIN 2
C
A
A
SDT04S60
2004-02-11
600
13
4
Unit
A
A²s
V
W
°C
PIN 3
C
A
V
nC
A

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Q67040-S4368 Summary of contents

Page 1

... Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, =25° Operating and storage temperature Final data P-TO220-2-2. Ordering Code Q67040-S4369 Q67040-S4368 Q67040-S4445 = 25 °C, unless otherwise specified Symbol I =100° ∫ Page 1 ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: P-TO263-3-2: @ min. footprint 2 P-TO263-3- cooling area P-TO252-3-1: @ min. footprint 2 P-TO252-3- ...

Page 3

Electrical Characteristics Parameter AC Characteristics Total capacitive charge =400V, I =4A /dt=200A/µ Switching time =400V, I =4A /dt=200A/µ Total capacitance =0V, T =25°C, f=1MHz V R ...

Page 4

Power dissipation tot 100 120 140 3 Typ. forward characteristic = parameter: T ...

Page 5

Typ. reverse current vs. reverse voltage =f µ 100 200 300 7 Typ. capacitance vs. reverse voltage C= f parameter: T ...

Page 6

Typ. capacitive charge vs. current slope Q = parameter 150 ° *0 100 200 300 400 500 ...

Page 7

SDP04S60, SDD04S60 Final data P-TO220-3-1 P-TO220-3-1 symbol [mm] min A 9.70 B 14.88 C 0.65 D 3.55 E 2.60 F 6.00 G 13.00 H 4.35 K 0.38 L 0.95 M 2.54 typ. N 4.30 P 1.17 T 2.30 P-TO252 (D-Pak) ...

Page 8

Final data N P symbol ...

Page 9

Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...

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