S8865-128G HAMAMATSU [Hamamatsu Corporation], S8865-128G Datasheet - Page 9

• Manufacturer Part Number: S8865-128G
• Description: Photodiode array combined with signal processing IC for X-ray detection
• Manufacturer: HAMAMATSU [Hamamatsu Corporation]

Photodiode arrays with ampli er
S8866-128G2
S8866-64G2
11.2
Type No.
*1: Distance from the bottom of the board to the center of active area
*2: Photodiode array with phosphor sheet S8865-256G only
Board: G10 glass epoxy
Connector: JAE (Japan Aviation Electronics lndustry, Limited)
PS-26PE-D4LT1-PN1
· Material: Gd
· Phosphor thickness: 300 μm Typ.
· Detectable energy range: 30 k to 100 keV
Photodiode 1 ch
8.2
8.0
a
Direction of scan
1
2
2
1
O
*1: Distance from the bottom of the board to the center of active area
*2: Photodiode array with phosphor sheet
CMOS1
2
S:Tb
Board: G10 glass epoxy
Connector: PRECI-DIP DURTAL 800-10-012-20-001
· Material: Gd
· Phosphor thickness: 300 μm Typ.
· Detectable energy range: 30 k to 100 keV
P2.54 × 11 = 27.94
P2.54 × 12 = 30.48
102.4
51.2
80.0
34.02
40.0
S8866-64G-02/-128G-02
Active area
+0.2
-0
+0.3
-0
2
O
2
S:Tb
S8865-256G
CMOS2
1 ch
12
25
26
(12 ×) 0.76
Signal processing
IC chip
(26 ×) 0.64 × 0.64
(× 4)
Signal processing IC chip
S8865-64G/-128G/-256G, S8866-64G-02/-128G-02
2.2
(4 ×) 2.2
2.54
*
2
1.6
6.6
2.28
Fluorescent
paper*
KMPDA0234EA
2
2.54
KMPDA0226
1.27
1.6
1.6
KMPDA0226EA
9