K9K4G16Q0M SAMSUNG [Samsung semiconductor], K9K4G16Q0M Datasheet - Page 28

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K9K4G16Q0M

Manufacturer Part Number
K9K4G16Q0M
Description
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
90 ID : Access command = 90H
ID Defintition Table
Read ID Operation
CLE
CE
WE
ALE
RE
I/Ox
1
2
3
4
st
nd
rd
th
Byte
Byte
Byte
Byte
Read ID Command
90h
K9K4G16Q0M
K9K4G16U0M
Description
Maker Code
Device Code
Don’ t care
Page Size, Block Size, Spare Size, Organization
Address. 1cycle
K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
00h
Device
t
REA
t
AR
Device Code*(2nd Cycle)
Maker Code Device Code
28
ECh
Same as each K9K4G08U0M in it
DCh
CCh
ACh
BCh
Device
Code*
XXh
FLASH MEMORY
4th Cycle*
15h
15h
55h
55h
4th cyc.*

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