K9K4G16Q0M SAMSUNG [Samsung semiconductor], K9K4G16Q0M Datasheet - Page 23

• Manufacturer Part Number: K9K4G16Q0M
• Description: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
Page Program Operation
CLE
CE
WE
ALE
RE
R/B
I/Ox
Input Command
SerialData
80h
t
WC
K9K4G16Q0M
K9K4G16U0M
Co.l Add1 Col. Add2
Column Address
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Row Add1
t
WC
Row Address
Row Add2 Row Add3
X8 device : m = 2112byte
X16 device : m = 1056word
t
ADL
23
1 up to m Byte
Din
N
Serial Input
t
WC
Din
M
Program
Command
10h
t
WB
t
FLASH MEMORY
PROG
Read Status
Command
I/O
I/O
0
0
=0 Successful Program
=1 Error in Program
70h
I/O
0