BT152-500RT_11 NXP [NXP Semiconductors], BT152-500RT_11 Datasheet - Page 2

• Manufacturer Part Number: BT152-500RT_11
• Description: High junction temperature capability Very high current surge capability
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT152-500RT
Product data sheet
Pin
1
2
3
mb
Type number
BT152-500RT
Symbol
V
V
I
I
I
I
dI
I
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
stg
j
DRM
RRM
t
RGM
GM
G(AV)
T
/dt
Symbol Description
K
A
G
A
Pinning information
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
cathode
anode
gate
mounting base; connected to anode
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Conditions
half sine wave; T
half sine wave; see
half sine wave; T
half sine wave; T
see
t
I
over any 20 ms period
p
T
Rev. 2 — 9 June 2011
= 10 ms; sine-wave pulse
= 50 A; I
Figure
G
Simplified outline
4; see
= 200 mA; dI
SOT78 (TO-220AB)
mb
j(init)
j(init)
Figure 5
≤ 122 °C; see
Figure
= 25 °C; t
= 25 °C; t
1 2
mb
G
1; see
/dt = 200 mA/µs
3
p
p
= 8.3 ms
= 10 ms;
Figure 2
Figure 3
BT152-500RT
Graphic symbol
Min
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2011. All rights reserved.
A
sym037
G
150
Version
SOT78
Max
500
500
13
20
220
200
200
200
5
5
20
1
150
K
Unit
V
V
A
A
A
A
A
A/µs
A
V
W
W
°C
°C
2 of 12
2
SCR
s