BT152-600R NXP Semiconductors, BT152-600R Datasheet
BT152-600R
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BT152-600R Summary of contents
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... BT152 series Thyristors Product specification DISCRETE SEMICONDUCTORS March 1997 ...
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... ˚C prior to j surge 8 0 /dt = 0.2 A/μs G over any 20 ms period 1 Product specification BT152 series MAX. MAX. MAX. UNIT BT152- 400R 600R 800R 450 650 800 200 200 200 ...
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... A/μs; D DRM(max 67 125 ˚C; D DRM(max / A/μ 100 Ω V/μ Product specification BT152 series MIN. TYP. MAX. UNIT - - 1.1 K K/W MIN. TYP. MAX. UNIT - ...
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... T(RMS) currents Hz VGT(Tj) VGT(25 C) BT151 1.6 1.4 1.2 1 0.8 0.6 0.4 - Fig.6. Normalised gate trigger voltage (25˚C), versus junction temperature Product specification BT152 series I TSM T time 100 1000 1 10 ≤ 103˚C. 100 150 . j Rev 1.200 ...
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... I (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT152 series BT152 typ 0 BT152 Zth j-mb (K/ 0.1ms 1ms 10ms 0. pulse width RGK = 100 Ohms ...
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... Dimensions in mm Net Mass 3,0 max not tinned Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 1997 10,3 max 3,7 2,8 3,0 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.13. TO220AB; pin 2 connected to mounting base. 5 Product specification BT152 series 4,5 max 1,3 13,5 min 5,9 min 15,8 max 0,6 2,4 Rev 1.200 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www ...