BFG520/XR NXP [NXP Semiconductors], BFG520/XR Datasheet - Page 6

• Manufacturer Part Number: BFG520/XR
• Description: NPN 9 GHz wideband transistor
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
In Figs 7 to 10, G
MSG = maximum stable gain; G
gain.
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
I
C
CE
= 5 mA; V
gain
(dB)
gain
(dB)
= 6 V; f = 900 MHz; T
Fig.7 Gain as a function of collector current.
25
20
15
10
50
40
30
20
10
5
0
0
10
0
Fig.9 Gain as a function of frequency.
CE
G UM
MSG
MSG
= 6 V; T
UM
= maximum unilateral power gain;
amb
10
10
amb
2
= 25 C.
= 25 C.
max
10
20
= maximum available
3
I C (mA)
f (MHz)
G max
G max
G UM
MRA674
MRA676
Rev. 04 - 23 November 2007
10
30
4
handbook, halfpage
handbook, halfpage
V
I
C
CE
BFG520; BFG520/X; BFG520/XR
= 20 mA; V
gain
(dB)
gain
(dB)
Fig.8 Gain as a function of collector current.
= 6 V; f = 2 GHz; T
25
20
15
10
50
40
30
20
10
5
0
0
10
Fig.10 Gain as a function of frequency.
0
MSG
CE
= 6 V; T
amb
10
10
amb
2
G UM
MSG
= 25 C.
= 25 C.
G max
G UM
10
20
3
Product specification
I C (mA)
f (MHz)
G max
MRA675
MRA677
6 of 14
10
30
4