BCP69-16-AA3-B-R UTC [Unisonic Technologies], BCP69-16-AA3-B-R Datasheet - Page 2

• Manufacturer Part Number: BCP69-16-AA3-B-R
• Description: NPN GENERAL PURPOSE AMPLIFIER
• Manufacturer: UTC [Unisonic Technologies]

BC817
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Derate above 25°C
Junction Temperature
Storage Temperature
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Thermal Resistance, Junction to Ambient
Note: Device mounted on FR-4 PCB 40mm×40mm×1.5mm.
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
2. The device is guaranteed to meet performance specification within 0℃~+70 ℃ operating temperature range
ABSOLUTE MAXIMUM RATING
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF hFE1*
and assured by design from –20℃~+85℃.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANGE
RANK
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
CHARACTERISTIC
PARAMETER
BC817-16
100-250
(Ta=25°C, unless otherwise specified)
(Ta=25°C, unless otherwise specified)
(Ta=25°C, unless otherwise specified)
SYMBOL
V
V
V
V
V
(BR)CEO
(BR)CES
(BR)EBO
h
CE(SAT)
I
h
BE(ON)
CBO
FE1
FE2
*
NPN EPITAXIAL SILICON TRANSISTOR
I
I
I
V
V
Ic=100mA,V
Ic=500mA, V
Ic=500mA,I
Ic=500mA, V
C
C
E
CB
CB
=10mA, I
=100µA,I
=10µA, Ic=0
TEST CONDITIONS
=20V
=20V,T
BC817-25
160-400
SYMBOL
V
V
V
T
SYMBOL
P
T
CEO
EBO
I
STG
CES
C
D
J
B
E
θ
a
B
=0
=150°C
=0
JA
CE
=50Ma
CE
CE
=1.0V
=1.0V
=1.0V
-40 ~ +150
RATINGS
RATING (Note)
350
150
5.0
1.5
2.8
45
50
See Classification
MIN TYP MAX UNIT
45
50
40
350
5
BC817-40
250-600
QW-R206-025.B
100
0.7
1.2
5
mW/°C
UNIT
mW
℃
℃
V
V
V
A
UNIT
°C/W
nA
µA
2
V
V
V
V
V