BCP69-25,115 NXP Semiconductors, BCP69-25,115 Datasheet
BCP69-25,115
Specifications of BCP69-25,115
BCP69-25 T/R
BCP69-25 T/R
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Related parts for BCP69-25,115
BCP69-25,115 Summary of contents
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... PNP medium power transistor Rev. 06 — 2 December 2008 1. Product profile 1.1 General description PNP medium power transistor in a Surface-Mounted Device (SMD) plastic package. Table 1. Type number BCP69 BCP69-16 BCP69-16/DG BCP69-16/IN BCP69-25 [1] /DG: halogen-free 1.2 Features I High current I Three current gain selections I 1 ...
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... BCP69_6 Product data sheet Quick reference data …continued Parameter Conditions DC current gain 500 mA C BCP69 BCP69-16 BCP69-16/DG BCP69-16/IN BCP69-25 Pinning Description base collector emitter collector Ordering information [1] Package Name Description SC-73 plastic surface-mounted package with increased heatsink; 4 leads Rev. 06 — 2 December 2008 ...
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... Rev. 06 — 2 December 2008 PNP medium power transistor Marking code BCP69 BCP69/16 BCP69-16D 69-16N BCP69/25 Conditions Min Max open emitter - 32 open base - ...
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... Rev. 06 — 2 December 2008 PNP medium power transistor mle311 55 115 175 amb 2 2 Conditions Min Typ [1] in free air - - [ [ © NXP B.V. 2008. All rights reserved. BCP69 Max Unit 200 K/W 125 K/W 89 K ...
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... FR4 PCB, mounting pad for collector 6 cm Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BCP69_6 Product data sheet Rev. 06 — 2 December 2008 PNP medium power transistor 006aab402 (s) p © NXP B.V. 2008. All rights reserved. BCP69 ...
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... 150 C j emitter-base cut-off current DC current gain BCP69 500 BCP69- BCP69-16/ 500 mA C BCP69-16/ 500 mA C BCP69- 500 mA C collector-emitter saturation voltage I = 100 mA B base-emitter voltage collector capacitance MHz transition frequency mA 100 MHz Rev. 06 — 2 December 2008 PNP medium power transistor ...
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... NXP Semiconductors Fig 3. BCP69-16: DC current gain as a function of collector current; typical values 1000 V BE (mV) 800 600 400 200 Fig 5. BCP69-16: Base-emitter voltage as a function of collector current; typical values BCP69_6 Product data sheet mle305 I ( (mA) C Fig 4. mle304 V CEsat (mV (mA) C Fig 6. Rev. 06 — 2 December 2008 PNP medium power transistor 2 ...
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... NXP Semiconductors Fig 7. BCP69-25: DC current gain as a function of collector current; typical values 1000 V BE (mV) 800 600 400 200 Fig 9. BCP69-25: Base-emitter voltage as a function of collector current; typical values BCP69_6 Product data sheet mle309 I ( (mA) C Fig 8. mle304 V CEsat (mV (mA) C Fig 10. BCP69-25: Collector-emitter saturation voltage Rev. 06 — ...
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... The indicated -xxx are the last three digits of the 12NC ordering code. Type number BCP69 BCP69-16 BCP69-16/DG BCP69-16/IN BCP69-25 [1] For further information and the availability of packing methods, see [2] /DG: halogen-free BCP69_6 Product data sheet 6.7 6.3 3.1 2.9 7.3 3.7 6.7 3 ...
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... Rev. 06 — 2 December 2008 BCP69 PNP medium power transistor solder lands solder resist 6.1 7.65 solder paste occupied area Dimensions in mm solder lands solder resist 6.2 8.7 occupied area Dimensions in mm preferred transport direction during soldering 1 ...
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... Product specification Product specification Product specification Rev. 06 — 2 December 2008 BCP69 PNP medium power transistor Change notice Supersedes - BCP69_5 - BCP69_4 - BCP69_3 - BCP69_CNV_2 © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 06 — 2 December 2008 BCP69 PNP medium power transistor © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BCP69 All rights reserved. Date of release: 2 December 2008 Document identifier: BCP69_6 ...