K9F6408Q0C-B Samsung semiconductor, K9F6408Q0C-B Datasheet - Page 28

• Manufacturer Part Number: K9F6408Q0C-B
• Description: 8M x 8 Bit Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F6408Q0C
K9F6408U0C
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 11). Its value can be
determined by the following guidance.
100n
200n
300n
V
CC
GND
Rp value guidance
Rp(min, 1.8V part) =
Rp(min, 3.3V part) =
Rp(max) is determined by maximum permissible limit of tr
1.7
1K
30
1.7
@ Vcc = 1.8V, Ta = 25
Device
Ibusy
tf
tr
open drain output
60
0.85
2K
1.7
R/B
where I
Rp(ohm)
Rp
90
V
V
3K
1.7
L
CC
CC
0.57
is the sum of the input currents of all devices tied to the R/B pin.
C , C
(Max.) - V
(Max.) - V
Figure 11. Rp vs tr ,tf & Rp vs ibusy
ibusy
I
I
OL
OL
L
C
1.7
= 30pF
120
0.43
4K
+ I
+ I
L
OL
OL
L
L
(Max.)
(Max.)
Ready Vcc
2m
3m
1m
=
=
28
100n
200n
300n
tf
3mA + I
8mA + I
1.85V
1.8V device - V
3.3V device - V
3.2V
VOL
L
L
2.4
1K
100
3.6
@ Vcc = 3.3V, Ta = 25
Ibusy
tf
Busy
tr
OL
OL
: 0.1V, V
: 0.4V, V
200
1.2
2K
3.6
FLASH MEMORY
Rp(ohm)
OH
OH
: Vcc
300
0.8
: 2.4V
3K
3.6
C , C
Q
tr
-0.1V
L
0.6
400
= 100pF
3.6
4K
VOH
2m
3m
1m