K9F6408Q0C-B Samsung semiconductor, K9F6408Q0C-B Datasheet - Page 2

• Manufacturer Part Number: K9F6408Q0C-B
• Description: 8M x 8 Bit Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F6408Q0C
K9F6408U0C
8M x 8 Bit Bit NAND Flash Memory
PRODUCT LIST
FEATURES
GENERAL DESCRIPTION
The K9F6408X0C is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. The device is offered in 1.8V or
3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation pro-
grams the 528-byte page in typical 200 s and an erase operation can be performed in typical 2ms on an 8K-byte block. Data in the
page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as com-
mand inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and
internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F6408X0C s extended reli-
ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. These algo-
rithms have been implemented in many mass storage applications and also the spare 16 bytes of a page combined with the other 512
bytes can be utilized by system-level ECC. The K9F6408X0C is an optimum solution for large nonvolatile storage applications such
as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.
- Memory Cell Array : (8M + 256K)bit x 8bit
- Data Register
- Page Program : (512 + 16)Byte
- Block Erase
- Random Access : 10 s(Max.)
- Serial Page Access
- Program Time
- Block Erase Time : 2ms(Typ.)
Voltage Supply
Organization
Automatic Program and Erase
528-Byte Page Read Operation
Fast Write Cycle Time
- 1.8V device(K9F6408Q0C) : 1.70~1.95V
- 3.3V device(K9F6408U0C) : 2.7 ~ 3.6 V
- 1.8V device(K9F6408Q0C) : 50ns
- 3.3V device(K9F6408U0C) : 50ns
- 1.8V device(K9F6408Q0C) : 200 s(Typ.)
- 3.3V device(K9F6408U0C) : 200 s(Typ.)
K9F6408Q0C-B,H
K9F6408U0C-B,H
K9F6408U0C-T,Q
K9F6408U0C-V,F
Part Number
: (8K + 256)Byte
: (512 + 16)bit x8bit
1.70 ~ 1.95V
Vcc Range
2.7 ~ 3.6V
2
- Program/Erase Lockout During Power Transitions
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- K9F6408U0C-TCB0/TIB0 :
- K9F6408Q0C-BCB0/BIB0
- K9F6408U0C-VCB0/VIB0
- K9F6408U0C-QCB0/QIB0 : Pb-free Package
- K9F6408Q0C-HCB0/HIB0 : Pb-free Package
- K9F6408U0C-FCB0/FIB0 : Pb-free Package
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Package
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
48- Ball TBGA ( 6 x 8.5 /0.8mm pitch , Width 1.0 mm)
48 - Pin WSOP I (12X17X0.7mm)
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
48- Ball TBGA ( 6 x 8.5 /0.8mm pitch , Width 1.0 mm)
48 - Pin WSOP I (12X17X0.7mm)
* K9F6408U0C-V,F(WSOPI ) is the same device as
Organization
K9F6408U0C-T,Q(TSOPII) except package type.
X8
FLASH MEMORY
PKG Type
WSOP I
TSOP II
TBGA