HMC475ST89_10 HITTITE [Hittite Microwave Corporation], HMC475ST89_10 Datasheet - Page 5

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HMC475ST89_10

Manufacturer Part Number
HMC475ST89_10
Description
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
8 - 78
8
Pin Descriptions
Application Circuit
Recommended Bias Resistor Values for
Icc= 110 mA, Rbias= (Vs - Vcc) / Icc
Recommended Component Values for Key Application Frequencies
Supply Voltage (Vs)
R
R
Pin Number
BIAS
BIAS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
2, 4
Component
V
P
1
3
ALUE
OWER
C1, C2
L1
R
ATING
Phone: 978-250-3343
Function
9.1 Ω
OUT
GND
¼ W
8V
IN
0.01 μF
270 nH
50
Application Support: Phone: 978-250-3343 or apps@hittite.com
18 Ω
½ W
9V
These pins and package bottom must be connected to RF/
RF output and DC Bias (Vcc) for the output stage.
100 pF
56 nH
v02.0710
An off chip DC blocking capacitor is required.
27 Ω
½ W
10V
900
Fax: 978-250-3373
This pin is DC coupled.
43 Ω
12V
1 W
Description
DC ground.
100 pF
18 nH
1900
Frequency (MHz)
Note:
1. External blocking capacitors are required on
2. R
HMC475ST89
RFIN and RFOUT.
MMIC AMPLIFIER, DC - 4.5 GHz
100 pF
Order On-line at www.hittite.com
18 nH
2200
BIAS
provides DC bias stability over temperature.
InGaP HBT GAIN BLOCK
100 pF
15 nH
2400
Interface Schematic
100 pF
/
8.2 nH
3500
475ST89E
6.8 nH
100 pF
4500

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