EN29LV800 EON [Eon Silicon Solution Inc.], EN29LV800 Datasheet - Page 42

• Manufacturer Part Number: EN29LV800
• Description: 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

Revisions List
0.1 (2001.07.03):
0.2 (2001.07.05):
0.3 (2001.08.23):
0.4 (2001.09.26):
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
On Table 7. DC Characteristics, changed:
Preliminary version
“block” changed to “sector”
LACTHUP >= 200mA line removed from first page
Chip erase and Sector Erase command descriptions modified.
DQ7,DQ5,DQ3 status polling descriptions modified.
Table 12 Latchup characteristics modified
Changed P/E endurance to 100K everywhere
Changed Absolute Maximum Ratings
Unlock Bypass stuff added
Table 8: input/output levels changed in notes.
Added in the Automatic Sleep Mode in User Mode Definitions section.
Re-Wrote the Write Mode in User Mode Definitions section.
Corrected the address range (A0 – A18) in Table 1.
Corrected the address pin (A18) in the TSOP Connection Diagram.
Modified the Program/Erase time in Table 11 – Program/Erase Performance.
Eliminated the max time for t
9 and 10 -- Program/Erase AC Characteristics.
Eliminated t
Eliminated the chip-erase time from the Features section.
Modified Test Specification Table for Read
“Vcc=2.7-3.6V +/- 10%” to “Vcc=2.7-3.6V”
VOH(TTL) Min “2.4” changed to “0.85 x Vcc”
WHWH3
in Table 10 - Program/Erase AC Characteristics.
Rev 0.4 Release Date: 2002/01/29
WHWH2
42
and updated t
WHWH1
and t
EN29LV800
WHWH2
Tel: [phone]
Fax: [phone]
in Tables