EN29LV010 EON [Eon Silicon Solution Inc.], EN29LV010 Datasheet - Page 22

• Manufacturer Part Number: EN29LV010
• Description: 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
• Manufacturer: EON [Eon Silicon Solution Inc.]

Table 8. AC CHARACTERISTICS
Read-only Operations Characteristics
JEDEC
t
t
t
t
t
t
t
Notes:
For -45R,-55
For -70, -90
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
AVAV
AVQV
ELQV
GLQV
EHQZ
GHQZ
AXQX
Parameter
Symbols
Standard
t
t
t
t
t
t
t
RC
ACC
CE
OE
DF
DF
OH
Vcc = 3.0V ± 5%
Output Load : 1 TTL gate and 30pF
Input Rise and Fall Times: 5ns
Input Rise Levels: 0.0 V to Vcc
Timing Measurement Reference Level, Input and Output: 1.5 V
Vcc = 3.0V ± 5%
Output Load: 1 TTL gate and 100 pF
Input Rise and Fall Times: 5 ns
Input Pulse Levels: 0.0 V to Vcc
Timing Measurement Reference Level, Input and Output: 1.5 V
Figure 5. AC Waveforms for READ Operations
Description
Read Cycle Time
Address to Output Delay
Chip Enable To Output Delay
Output Enable to Output Delay
Chip Enable to Output High Z
Output Enable to Output High Z
Output Hold Time from
Addresses,
whichever occurs first
CE
or
OE
,
Rev. B, Issue Date: 2004/01/05
22
CE
OE
OE
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Setup
Test
= V
= V
= V
IL
IL
IL
Min
Max
Max
Max
Max
Max
Min
-45R
45
45
45
25
10
10
0
Speed Options
EN29LV010
-55
55
55
55
30
15
15
0
-70
70
70
70
30
20
20
0
-90
90
90
90
35
20
20
0
Unit
ns
ns
ns
ns
ns
ns
ns