EN29GL128H-70BAIP EON [Eon Silicon Solution Inc.], EN29GL128H-70BAIP Datasheet - Page 47

• Manufacturer Part Number: EN29GL128H-70BAIP
• Description: 128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

WE#
DQ6
DQ2
Figure 20. Alternate CE# Controlled Write Operation Timings
Notes:
PA = address of the memory location to be programmed.
PD = data to be programmed at byte address.
VA = Valid Address for reading program or erase status
D
Shown above are the last two cycles of the program or erase command sequence and the last status read cycle
Reset# shown to illustrate t
sequence.
Figure 21. DQ2 vs. DQ6
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
out
Addresses
WE#
OE#
CE#
Data
RY/BY#
Reset#
= array data read at VA
t
GHEL
t
t
RH
WS
Embedded
Erase
Enter
0x555 for Program
0x2AA for Erase
t
WC
t
DS
t
0xA0 for
Program
CP
RH
measurement references. It cannot occur as shown during a valid command
PA for Program
SA for Sector Erase
0x555 for Chip Erase
Erase
t
CPH
t
t
t
DH
AS
WH
Suspend
t
Rev. H, Issue Date: 2009/10/01
Erase
AH
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
Suspend
Enter
Read
t
CWHWH1
47
t
BUSY
/ t
Enter Erase
©2004 Eon Silicon Solution, Inc.,
CWHWH2
Suspend
Program
/ t
CWHWH3
Status
Suspend
Program
Enter
VA
D
OUT
Erase
Suspend
Read
EN29GL128H/L
Resume
Erase
www.eonssi.com
Erase
Complete
Erase