EN29F512 EON [Eon Silicon Solution Inc.], EN29F512 Datasheet - Page 20

• Manufacturer Part Number: EN29F512
• Description: 512 Kbit (64K x 8-bit) 5V Flash Memory
• Manufacturer: EON [Eon Silicon Solution Inc.]

ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Ambient Temperature
Voltage with Respect to Ground
Output Short Circuit Current (Note 3) . . . . . . . . . 200 mA
Notes:
1.
2.
3.
OPERATING RANGES
Commercial (C) Devices
Industrial (I) Devices
V
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
CC
Supply Voltages
Plastic Packages . . . . . . . . . . . . . . . –65°C to +125°C
with Power Applied. . . . . . . . . . . . . . –55°C to +125°C
V
A9, OE# (Note 2) . . . . . . . . . . . . . . . –0.5 V to 11.5 V
All other pins (Note 1) . . . . . . . . . . . . –0.5 V to Vcc+0.5V
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot
V
Maximum DC voltage on input and I/O pins is V
pins may overshoot to V
Minimum DC input voltage on A9 pin is –0.5 V. During voltage transitions, A9 and OE# may
undershoot V
Figure. Maximum DC input voltage on A9 and OE# is 11.5 V which may overshoot to 12.5 V for
periods up to 20 ns.
No more than one output shorted to ground at a time. Duration of the short circuit should not be greater
than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may
affect device reliability.
Ambient Temperature (T A ) . . . . . . . . . . . 0°C to +70°C
Ambient Temperature (T A ). . . . . . . . . . -40°C to +85°C
V
V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
Maximum Negative Overshoot
SS
CC
CC
CC
to –1.0V for periods of up to 50 ns and to –2.0 V for periods of up to 20 ns. See Left Figure below.
(Note 1) . . . . . . . . . . . . . . . . . . . . –0.5 V to 7.0 V
for ± 5% devices . . . . . . . . . . . . +4.75 V to +5.25 V
for ± 10% devices . . . . . . . . . . . +4.50 V to +5.50 V
Waveform
SS
to –1.0V for periods of up to 20 ns and to –2.0 V for periods of up to 20 ns. See Left
CC
+ 2.0 V for periods up to 20 ns. See Right Figure below.
Rev. A, Issue Date: 2003/10/20
20
CC
+ 0.5 V. During voltage transitions, input and I/O
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Maximum Positive Overshoot
Waveform
EN29F512