EN29F040A EON [Eon Silicon Solution Inc.], EN29F040A Datasheet - Page 22

• Manufacturer Part Number: EN29F040A
• Description: 4 Megabit (512K x 8-bit) Flash Memory
• Manufacturer: EON [Eon Silicon Solution Inc.]

Table 8. AC CHARACTERISTICS
Read-only Operations Characteristics
JEDEC
Notes:
For -45, -55
For all others:
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
t
t
t
t
t
t
t
AVQV
GLQV
EHQZ
GHQZ
AXQX
AVAV
ELQV
Parameter
Symbols
Standard
t
t
t
t
t
t
t
ACC
OH
RC
CE
OE
DF
DF
Vcc = 5.0V ± 5%
Output Load : 1 TTL gate and 30pF
Input Rise and Fall Times: 5ns
Input Rise Levels: 0.0 V to 3.0 V
Timing Measurement Reference Level, Input and Output: 1.5 V
Vcc = 5.0V ± 10%
Output Load: 1 TTL gate and 100 pF
Input Rise and Fall Times: 20 ns
Input Pulse Levels: 0.45 V to 2.4 V
Timing Measurement Reference Level, Input and Output: 0.8 V and 2.0 V
Output Enable to Output High Z
Output Enable to Output Delay
Chip Enable to Output High Z
Chip Enable To Output Delay
Address to Output Delay
Addresses,
Output Hold Time from
whichever occurs first
Read Cycle Time
Description
CE
or
OE
Rev. B, Issue Date: 2004/04/01
,
22
CE
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
OE
OE
Test Setup
= V
=
=
V
V
IL
IL
IL
Max
Max
Max
Max
Max
Min
Min
-45
45
45
45
25
10
10
0
Speed Options
-55
EN29F040A
55
55
55
30
15
15
0
-70
70
70
70
30
20
20
0
-90
90
90
90
35
20
20
0
Unit
ns
ns
ns
ns
ns
ns
ns