CM400DY-24A_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM400DY-24A_09 Datasheet - Page 3

• Manufacturer Part Number: CM400DY-24A_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
10
800
700
600
500
400
300
200
100
10
10
10
10
–1
COLLECTOR-EMITTER VOLTAGE V
10
COLLECTOR-EMITTER VOLTAGE V
0
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
0
6
COLLECTOR-EMITTER SATURATION
–1
GATE-EMITTER VOLTAGE V
V
GE
2
VOLTAGE CHARACTERISTICS
V
OUTPUT CHARACTERISTICS
GE
8
20V
3 5 7
= 0V
2
=
CAPACITANCE–V
CHARACTERISTICS
10
10
(TYPICAL)
(TYPICAL)
(TYPICAL)
0
4
12
2
15
3 5 7
13
14
6
10
16
1
CE
T
I
I
I
T
C
C
C
2
j
C
C
C
j
8
= 25°C
= 800A
= 400A
= 160A
= 25°C
GE
3 5 7
ies
oes
res
18
(V)
CE
CE
12
11
10
9
10
10
20
(V)
(V)
2
3
10
10
10
10
10
10
4
3
2
1
0
EMITTER-COLLECTOR VOLTAGE V
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
3
2
1
10
0
0
COLLECTOR-EMITTER SATURATION
1
V
SWITCHING CHARACTERISTICS
GE
FORWARD CHARACTERISTICS
100
VOLTAGE CHARACTERISTICS
COLLECTOR CURRENT I
COLLECTOR CURRENT I
2
= 15V
t
t
d(off)
d(on)
1
200
FREE-WHEEL DIODE
3
t
t
HIGH POWER SWITCHING USE
f
r
HALF-BRIDGE
300
5 7
MITSUBISHI IGBT MODULES
(TYPICAL)
(TYPICAL)
(TYPICAL)
2
400 500
10
2
CM400DY-24A
3
Conditions:
V
V
R
T
Inductive load
2
j
CC
GE
G
= 125°C
T
T
600
T
T
3
= 0.78Ω
j
j
j
j
= 600V
= ±15V
= 25°C
= 125°C
= 25°C
= 125°C
C
C
4
700 800
(A)
(A)
5 7
EC
10
(V)
5
3
Feb. 2009