GM71C17403C-5 HYNIX [Hynix Semiconductor], GM71C17403C-5 Datasheet - Page 4

• Manufacturer Part Number: GM71C17403C-5
• Description: 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev 0.1 / Apr’01
Capacitance (V
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
AC Characteristics (V
Symbol
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
Test Conditions
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RP
CP
RAS
CAS
ASR
RAH
ASC
CAH
RCD
RAD
RSH
CSH
CRP
ODD
DZO
DZC
T
Input rise and fall times: 2 ns
Input timing reference levels: 0.8V, 2.4V
Symbol
2. CAS = V
C
C
C
I1
I2
I/O
Random Read or Write Cycle Time
RAS Precharge Time
CAS Precharge Time
RAS Pulse Width
CAS Pulse Width
Row Address Set up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
RAS Hold Time
CAS Hold Time
CAS to RAS Precharge Time
OE to D
OE Delay Time from D
CAS Delay Time from D
Transition Time (Rise and Fall)
IH
to disable D
IN
CC
Input Capacitance (Address)
Input Capacitance (Clocks)
Output Capacitance (Data-In/Out)
Delay Time
= 5V+/-10%, T
Parameter
OUT
CC
.
= 5V+/-10%, T
IN
IN
Parameter
A
= 25C)
Output timing reference levels: 0.8V, 2.0V
Output load : 1 TTL gate + C
A
GM71C(S)17403
C/CL-5
Min
= 0 ~ 70C, Notes 1, 2, 18, 19)
84
30
50
11
10
35
13
9
7
7
0
7
0
0
2
7
5
0
10,000
10,000
Max
37
25
50
-
-
-
-
-
-
-
-
-
-
-
-
-
(Including scope and jig)
GM71C(S)17403
C/CL-6
Min
Min
104
40
10
60
10
10
10
14
12
13
40
15
-
-
-
0
0
5
0
0
2
10,000
10,000
Max
45
30
50
GM71C(S)17403C/CL
-
-
-
-
-
-
-
-
-
-
-
-
-
L
Max
(100pF)
GM71C(S)17403
C/CL-7
Min
5
7
7
124
50
13
70
13
10
13
14
12
13
45
18
0
0
5
0
0
2
10,000
10,000
Max
52
35
50
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1, 2
Note
1
1
21
22
24
3
4
5
6
6
7